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The Critical Thickness of Layers Subject to Anisotropic Misfit.

Published online by Cambridge University Press:  22 February 2011

Richard Beanland
Richard Beanland*
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69, 3BX, England.
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Abstract

It is well known that it becomes energetically favourable for misfit dislocations to be introduced into strained epitaxial layers above a certain ‘critical’ layer thickness, hc. To date, theoretical calculations of hc have only been made for cases of isotropie misfit - i.e. cases where the misfit is the same for every direction in the interface. Using a new formulation of the Frank-Bilby equation and the concept of coherency dislocations, it is now possible to treat cases of anisotropie misfit, such as silicon on sapphire (SOS). The method used to obtain the critical thickness is described, and values of hc and equilibrium dislocation density are given for various materials systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 407
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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