Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-03T08:19:02.718Z Has data issue: false hasContentIssue false
  • English
  • Français

A Critical Regime for Amorphization of Ion Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

R. D. Goldberg ,
J. S. Williams  and
R. G. Elliman
R. D. Goldberg
Affiliation:
Present Address: Department of Physics, The University of Western Ontario, London, Ontario, Canada, N6A 3K7.
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, 0200, Australia.
R. G. Elliman
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, 0200, Australia.
Get access

Abstract

A critical regime has been identified for ion implanted silicon where only slight changes in temperature can dramatically affect the levels of residual damage. In this regime decreases of only 5° C are sufficient to induce a crystalline-to-amorphous transformation in material which only exhibited the build-up of extended defects at higher temperatures. Traditional models of damage accumulation and amorphization have proven inapplicable to this regime which exists whenever dynamic defect annealing and damage production are closely balanced. Irradiating ion flux, mass and fluence have all been shown to influence the temperature— which varies over a range of 300° C for ion species ranging from C to Xe—at which the anomalous behaviour occurs. The influence of ion fluence suggests that complex defect accumulation plays an important role in amorphization. Results are presented which further suggest that the process is nucleation limited in this critical regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 259
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Dennis, J. R. and Hale, E. B., J. Appl. Phys. 49 (3), 1119 (1978).Google Scholar
2 Gibbons, J. F., Proc. IEEE 60, 1062 (1972).Google Scholar
3 Linnros, J., Elliman, R. G. and Brown, W. L., J. Mater. Res. 3 (6), 1208 (1988).Google Scholar
4 Williams, J. S., Short, K. T., Elliman, R. G., Ridgway, M. C. and Goldberg, R., Nucl. Instr. and Meth. B48, 431 (1990).Google Scholar
5 Schultz, Peter J., Jagadish, C., Ridgway, M. C., Elliman, R. G. and Williams, J. S., Phys. Rev. B 44 (16), 9118 (1991).Google Scholar
6 Written by Brown, R., Ph.D. student, The University of Melbourne, Melbourne, Australia.Google Scholar
7 Ziegler, James F., J. Appl. Phys. 43 (7), 2973 (1972).Google Scholar
8 Biersack, J. P. and Haggmark, L. G., Nucl. Inst. and Meth. 174, 257 (1980).Google Scholar
9 Elliman, R. G., Linnros, J. and Brown, W. L., Mater. Res. Soc. Proc. 100, 363 (1988).Google Scholar
10 Goldberg, R. D., Williams, J. S. and Elliman, R. G., to be published.Google Scholar
11 Jackson, K. A., J. Mater. Res. 3 (6), 1218 (1988).Google Scholar
12 Goldberg, R. D., Ph.D thesis, The University of Melbourne.Google Scholar