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Correlation of Drain Current Pulsed Response with Microwave Power Output in AlGaN/GaN HEMTs

Published online by Cambridge University Press:  10 February 2011

S. C. Binari ,
K. Ikossi-Anastasiou ,
W. Kruppa ,
H. B. Dietrich ,
G. Kelner ,
R. L. Henry ,
D. D. Koleske  and
A. E. Wickenden
S. C. Binari
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375
K. Ikossi-Anastasiou
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375
W. Kruppa
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375
H. B. Dietrich
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375
G. Kelner
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375
R. L. Henry
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375
D. D. Koleske
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375
A. E. Wickenden
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375
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Abstract

The drain-current response to short (<1μs) gate pulses has been measured for a series of GaN HEMT wafers that have similar dc and small-signal characteristics. This response has been found to correlate well with the measured microwave power output. For example, for devices where the pulsed drain current is greater than 70% of the dc value, output power densities of up to 2.3 W/mm are attained. This is in contrast with 0.5 W/mm measured for devices with low pulse response (less than 20% of the dc value). These results, which can be explained by the presence of traps in the device structure, provide a convenient test which is predictive of power performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 541
Copyright
Copyright © Materials Research Society 1999

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References

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