Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-02-05T06:19:36.583Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation Between Oxide Breakdown And Defects In Sic Wafers

Published online by Cambridge University Press:  10 February 2011

S. Soloviev ,
I. Khlebnikov ,
V. Madangarli  and
T. S. Sudarshan
S. Soloviev
Affiliation:
Department of Electrical and Computer Engineering University of South Carolina, Columbia, SC 29208
I. Khlebnikov
Affiliation:
Department of Electrical and Computer Engineering University of South Carolina, Columbia, SC 29208
V. Madangarli
Affiliation:
Department of Electrical and Computer Engineering University of South Carolina, Columbia, SC 29208
T. S. Sudarshan
Affiliation:
Department of Electrical and Computer Engineering University of South Carolina, Columbia, SC 29208
Get access

Abstract

A correlation between gate oxide breakdown in MOS capacitor structures and structural defects in SiC wafers is reported. The oxide breakdown under high applied fields, in the accumulation regime of the MOS capacitor structure, is observed to occur at locations corresponding to the edge of bulk structural defects in the SiC wafer such as polytype inclusions, regions of crystallographic mis-orientation, or different doping concentration. Breakdown measurements on more than 50 different MOS structures did not indicate any failure of the oxide exactly above a micropipe. The scatter in the oxide breakdown field across a 10mm × 10mm square area was about 50%, and the highest breakdown field obtained was close to 8 MV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 351
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wang, S. M., Berry, W. B., Kwor, R., Zeller, M. V., Matus, L. G., J. Electrochem. Soc., 137 (1), 221, (1990).Google Scholar
2. Zetterling, C. M. and Ostling, M., Diamond, SiC, and Nitride Wide Bandgap Semiconductors, 339, eds. Carter, C. H Jr., Gildennlatt, G., Nakamura, S. and Nemanich, R. J. (Pittsburgh, PA, Materials Research Society, 1994), p.209.Google Scholar
3. Lipkin, L. A. and Palmour, J. W.,, J. Electrochem. Soc., 25 (5), 909, (1996).Google Scholar
4. Madangarli, V. P., Ph. D Dissertation, University of South Carolina, 1996.Google Scholar
5. Sudarshan, T. S., Madangarli, V. P., Gradinaru, G., Tin, C. C., Hu, R., and Isaacs-Smith, T., Materials Research Society Symposium Proceedings 423, (1996), pp. 99.Google Scholar
6. Soloviev, S., Khlebnikov, I., Madangarli, V. and Sudarshan, T. S., “Structural Defect Visualization in SiC wafers after Thermal Oxidation”, submitted to J. Electronic Materials.Google Scholar
7. Heindl, J. and Strunk, H. P., Phys. Stat. Sol. (B), 193, K1, (1996).Google Scholar
8. Schusgir, P. and Gugal, I., Mat. Res. Bulletin, vol 4, pp.311–320, (1969).Google Scholar
9. Khlebnikov, I., Khlebnikov, Y., Solodovnik, E., and Madangarli, V., and Sudarshan, T. S., Presented at the 39th Electronic Materials Conference, Fort Collins, Colorado, (1997).Google Scholar