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Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain

Published online by Cambridge University Press:  10 February 2011

Hyun Cho ,
T. Maeda ,
J. D. MacKenzie ,
S. M. Donovan ,
C. R. Abemathy ,
S. J. Pearton ,
R. J. Shul ,
J. Han  and
F. Ren
Hyun Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL, USA
T. Maeda
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL, USA
J. D. MacKenzie
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL, USA
S. M. Donovan
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL, USA
C. R. Abemathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL, USA
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL, USA
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM, USA
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque NM, USA
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL, USA
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Abstract

Anisotropic pattern transfer has been performed for GaN, InN and AIN in Cl2/Ar, BI3/Ar and BBr3/Ar Inductively Coupled Plasmas(ICP). Controlled etch rates in the range of 500–1500Å·min−1 are obtained for III-nitride materials in Cl2/Ar chemistry. Etch selectivities of 100:1 were achieved for InN over both GaN and AIN in the BI3 mixtures, while for BBr3 discharges values of 100:1 for InN over AIN and 25:1 for InN over GaN were measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 501
Copyright
Copyright © Materials Research Society 1998

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References

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