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Comparison of Kinetics of TiSi2 Formation on Si(100) and Si(111)

Published online by Cambridge University Press:  28 February 2011

C. A. Pico ,
N. C. Tran ,
J. R. Jacobs  and
M. G. Lagally
C. A. Pico
Affiliation:
Department of Metallurgical Engineering and Materials Science Center, University of Wisconsin-Madison, Madison, WI 53706
N. C. Tran
Affiliation:
Department of Metallurgical Engineering and Materials Science Center, University of Wisconsin-Madison, Madison, WI 53706
J. R. Jacobs
Affiliation:
Department of Metallurgical Engineering and Materials Science Center, University of Wisconsin-Madison, Madison, WI 53706
M. G. Lagally
Affiliation:
Department of Metallurgical Engineering and Materials Science Center, University of Wisconsin-Madison, Madison, WI 53706
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Abstract

Refractory-metal silicides are currently receiving widespread attention because of their usefulness as interconnects in VLSI devices. Potentially the most important of these silicides is TiSi2. TiSi2 offers a sharp stable interface, a high process-compatible eutectic temperature, and the lowest resistivity of all refractory-metal silicides. Much of the previous work on TiSi2 [1-8] has been directed towards the understanding of the kinetics of silicide formation in order to optimize these electrical and interfacial properties. One parameter that may affect the silicide formation is substrate orientation [9]. We have compared the kinetics of formation of TiSi2 for Ti deposited onto p-type 10Ω-cm Si(100) and Si(111). All process parameters except substrate orientation were identical. 2800Å of Ti was electron-beam evaporated at a rate of 20Å/s and a background pressure of 9×10−8 torr onto chemically cleaned (HNO3, HF, rinse) Si substrates and subsequently annealed at temperatures between 470°C and 700°C in evacuated sealed quartz tubes. A turbopumped vacuum system was used to evacuate the quartz tube before sealing. A Ti getter was independently heated to remove remaining background contaminants prior to annealing.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 315
Copyright
Copyright © Materials Research Society 1986

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References

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