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A Comparative Study on Electromigration Failure Mechanism Between Near-Bamboo and Bamboo Al(Cu) Two-Level Structure

Published online by Cambridge University Press:  15 February 2011

P.-H. Wang ,
C. Lee ,
D. jawarani ,
H. kawasaki  and
P. S. ho
P.-H. Wang
Affiliation:
Center for Materials Science and Engineering, University of Texas at Austin, PRC/MER 2.206 Mailcode R8650, Austin, TX 78712-1100
C. Lee
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Austin, TX 78721
D. jawarani
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Austin, TX 78721
H. kawasaki
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Austin, TX 78721
P. S. ho
Affiliation:
Center for Materials Science and Engineering, University of Texas at Austin, PRC/MER 2.206 Mailcode R8650, Austin, TX 78712-1100
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Abstract

As the interconnect line width reduces to the sub-micron range, the grain distribution of Al(Cu) alloy lines reaches a bamboo structure. Understanding of the electromigration resistance of near-bamboo and bamboo structures is essential to the sub-micron reliability issue. In this study, the mass transport and failure mechanism of 1 μm wide Al(1%Cu) two-level lines with near-bamboo and bamboo structures were investigated by a drift velocity technique [1]. Our results show that interfacial (A10X/A1 interface) diffusion coupled with grain boundary diffusion determines the failure mechanism of bamboo lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 265
Copyright
Copyright © Materials Research Society 1995

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References

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