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Characterization of Thin Metal Films by SIMS, AUGER, and TEM

Published online by Cambridge University Press:  22 February 2011

B. K. Furman ,
J. P. Benedict ,
K. L. Granato ,
R. M. Prestipino  and
D. Y. Shih
B. K. Furman
Affiliation:
IBM Corporation, Poughkeepsie, NY 12602
J. P. Benedict
Affiliation:
IBM Corporation, Poughkeepsie, NY 12602
K. L. Granato
Affiliation:
IBM Corporation, Poughkeepsie, NY 12602
R. M. Prestipino
Affiliation:
IBM Corporation, Poughkeepsie, NY 12602
D. Y. Shih
Affiliation:
IBM Corporation, East Fishkill, Hopewell Junction, NY 12533
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Abstract

Secondary ion mass spectrometry (SIMS), Auger spectroscopy, and transmission electron microscopy (TEM) were applied to study Au, Cu, Ti, Ti-W, Cr, Al-Cu, and Al metal films deposited on both Si and ceramic substrates.

SIMS analysis of as-deposited metal films was used to characterize impurity levels, both metallic and gaseous, incorporated during deposition. The results revealed that the levels varied under generally accepted deposition conditions. As-deposited and annealed films were examined with SIMS, Auger, and TEM to study interdiffusion, grain growth, and impurity segregation as a function of processing conditions. Metallic impurities were observed to modify Au/Ti interdiffusion. Large variations in residual H, C, O, and N were observed in as-deposited Al and Al-Cu films.

Hydrogen, incorporated during deposition of Ti films, was observed to redistribute after thermal annealing in N2 or thermal cycling in forming gas (N2-10% H2). Samples thermally cycled in forming gas absorbed additional H into the Ti layer. SIMS/ion imaging was used to study the incorporation and segregation of H. Differences in H behavior were observed to be dependent upon metal structure, composition, and substrate material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 341
Copyright
Copyright © Materials Research Society 1985

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