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Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

Published online by Cambridge University Press:  10 February 2011

Daniel Hofstetter ,
Robert L. Thornton ,
Linda T. Romano ,
David P. Bour ,
Michael Kneissl ,
Rose M. Donaldson  and
Clarence Dunnrowicz
Daniel Hofstetter
Affiliation:
University of Neuchftel, Institute of Physics, Rue A.-L. Breguet 1, 2000 Neuchâtel, Switzerland, [email protected]
Robert L. Thornton
Affiliation:
MAXTEK Components Corporation, 13335 SW Terman Road, Beaverton, OR 97075-0428
Linda T. Romano
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
David P. Bour
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Michael Kneissl
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Rose M. Donaldson
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Clarence Dunnrowicz
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

We present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1. 1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G2.2
Copyright
Copyright © Materials Research Society 1999

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References

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