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C-Axis Oriented Thin Films of PbZrO3 on Silicon Substrate by Pulsed Laser Ablation

Published online by Cambridge University Press:  10 February 2011

S. Chattopadhyay ,
V. R. Palkar ,
P. Ayyub ,
S. C. Purandare ,
S. P. Pam ,
P. R. Apte ,
R. Pinto  and
M. S. Multani
S. Chattopadhyay
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400 005, India.
V. R. Palkar
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400 005, India.
P. Ayyub
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400 005, India.
S. C. Purandare
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400 005, India.
S. P. Pam
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400 005, India.
P. R. Apte
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400 005, India.
R. Pinto
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400 005, India.
M. S. Multani
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400 005, India.
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Abstract

We report the successful deposition of single phase c-axis oriented films of lead zirconate (PbZrO3) on a silicon substrate by pulsed laser ablation. The formation of the film at different substrate temperatures was studied using atomic force microscopy and scanning electron microscopy. We also measured the temperature dependence of the dielectric constant of the films and their dielectric hysteresis behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 207
Copyright
Copyright © Materials Research Society 1996

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References

1. Shirane, G., Sawaguchi, E., and Takagi, Y., Phys. Rev. 84, 476 (1951).Google Scholar
2. Yamakawa, K., Trolier-McKinstry, S., Dougherty, J.P. and Krupanidhi, S.B., Appl. Phys. Lett. 67, 2014 (1995).Google Scholar
3. Kanno, I., Hayashi, S., Kitagawa, M., Takayama, R. and Hirao, T., Appl. Phys. Lett. 66, 145 (1995).Google Scholar
4. Tani, T., Li, J.F., Viehland, D. and Payne, D.A., J. Appl. Phys. 75, 3017 (1994).Google Scholar
5. Akiyama, Y., Kimura, S. and Fujimura, I., Jpn. J. Appl. Phys. 32, 4154 (1993).Google Scholar
6. Li, K. K., Wang, F. and Haertling, G. H., J. Mater. Res. 30, 1386 (1995).Google Scholar
7. Bai, G. R., Chang, H. L. M., Lam, D. J. and Gao, Y., Appl. Phys. Lett. 62, 1754 (1993).Google Scholar
8. Chattopadhyay, S., Ayyub, P., Palkar, V.R. and Multani, M.S., Phys. Rev. B 52, 13177 (1995).Google Scholar
9. Vispute, R. D., Kanetkar, S. M., Ogale, S. B., Rajkumar, K. C., Madhukar, A., Parikh, N. and Patnaik, B., Physica C 199, 59 (1992).Google Scholar