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Cathodoluminescence Deep Level Spectroscopy of Etched and In-Situ Annealed 6H-SiC

Published online by Cambridge University Press:  10 February 2011

A. P. Young ,
K. Aptowitz  and
L. J. Brillson
A. P. Young
Affiliation:
The Ohio State University, Department of Electrical Engineering, Columbus, Ohio 43210-1272
K. Aptowitz
Affiliation:
The Ohio State University, Department of Electrical Engineering, Columbus, Ohio 43210-1272
L. J. Brillson
Affiliation:
The Ohio State University, Department of Electrical Engineering, Columbus, Ohio 43210-1272
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Abstract

Through variable-energy electron beam excitation (0.5 keV-2.0 keV), we observe depth dependent differences in the cathodoluminescence spectra of 6H-SiC (0001) Si-terminated surfaces. The etched SiC exhibits three deep level defects in the near-surface region, including a defect peak observed at 0.92 eV, known to be associated with vanadium. In-situ annealing produces a dramatic relative decrease in the luminescence from vanadium impurities near the surface after annealing to 500 °C, and then the subsequent re-emergence of vanadium in the nearsurface regime after annealing to 810 °C. This temperature-dependent redistribution suggests either diffusion or segregation of vanadium from the bulk up toward the near-surface region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 137
Copyright
Copyright © Materials Research Society 1998

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References

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