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Carrier relaxation and recombination in InGaN/GaN quantum heterostructures probed with time-resolved cathodoluminescence

Published online by Cambridge University Press:  10 February 2011

Xingang Zhang ,
D. H. Rich ,
J. T. Kobayashi ,
N. P. Kobayashi  and
P. D. Dapkus
Xingang Zhang
Affiliation:
Department of Materials Science and Engineering, University of Southern California, Los Angeles, CA 90089-0241
D. H. Rich
Affiliation:
Department of Materials Science and Engineering, University of Southern California, Los Angeles, CA 90089-0241
J. T. Kobayashi
Affiliation:
Department of Materials Science and Engineering, University of Southern California, Los Angeles, CA 90089-0241
N. P. Kobayashi
Affiliation:
Department of Materials Science and Engineering, University of Southern California, Los Angeles, CA 90089-0241
P. D. Dapkus
Affiliation:
Also with Department of Electrical Engineering/Electrophysics, University of Southern California, Los Angeles, CA 90089-0271
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Abstract

Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation in InGaN/GaN heterostructure and single quantum well (QW) samples. CL images of the QW sample revealed a spotty cellular pattern indicative of local In compositional fluctuations on a scale of < 100 nm. The compositional variations induce local potential fluctuations, resulting in a strong lateral excitonic localization at InN-rich regions in the InGaN QW layer. Time-resolved CL measurements revealed a lateral spatial variation in the luminescence decay time which correlates with the spatial variation in the luminescence efficiency. A reduced lifetime is observed at boundary regions between centers of excitonic localization. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at the InN-rich centers. An electron beam induced modification of the emission spectra was observed for InGaN/GaN heterostructure samples. Exposure to the e-beam resulted in a shift in the near-band gap emission to higher energies with a simultaneous increase in the emission intensity. These result are interpreted as a modification of the surface passivation through e-beam exposure and carbidization of the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 193
Copyright
Copyright © Materials Research Society 1998

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