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Bulk Gan Crystal With Low Defect Density Grown By Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  10 February 2011

A. Usui
A. Usui*
Affiliation:
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, JAPAN, [email protected]
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Abstract

A new approach to grow thick GaN layers by hydride vapor phase epitaxy (HVPE) is described. Selective growth is carried out at the beginning of growth. The coalescence of selectively grown facet structures makes it possible to achieve a flat surface over the entire substrate. As a result, crack-free GaN films with mirror-like surfaces are successfully grown even to a thickness of about 100 μm on a 2-inch-diameter sapphire substrate. The extended defect density is as low as 6×107 cm−2. The reduction mechanism for dislocation is discussed based on TEM observation. The high optical properties of FIELO GaN are confirmed by 5 K photoluminescence and reflectance measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 233
Copyright
Copyright © Materials Research Society 1998

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References

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H.,Sugimoto, Y., Kozai, T., Umemoto, H., Sanao, M. and Chocho, K., Proceedings of 2nd Int. Conf Nitride Semiconductors, Tokushima, 1997, p.444.Google Scholar
2. Lester, S.D., Ponce, F.A., Craford, M.G. and Steigerwald, D.A., Appl.Phys.lett. 66, 1249 (1995).Google Scholar
3. Wu, X.H., Brown, L.M., Kapolnek, D., Keller, S., Keller, B., DenBaars, S.P. and Speck, J.S., J.Appl.Phys. 80, 3228 (1996).10.1063/1.363264Google Scholar
4. Keller, S., Keller, B.P., Wu, Y.-E., Heying, B., Kapolnek, D., Speck, J.S., Mishra, U.K. and DenBaars, S.P., Appl.Phys.Lett. 68, 1525 (1996).Google Scholar
5. Kuramata, A., Horino, K., Domen, K., Somejima, R., Sudo, H. and Tanahashi, T., Proceedings of Int. Symp. Blue Laser and Emitting Diodes, Chiba Univ., 1996, p.80.Google Scholar
6. Porowski, S., Proceedings of 2nd Int. Conf Nitride Semiconductors, Tokushima, 1997, p.430.Google Scholar
7. Naniwae, K., Itoh, S., Amano, H., Itoh, K., Hiramatsu, K. and Akasaki, I., J. Cryst. Growth 99, 381 (1990).Google Scholar
8. Molnar, R.J., Maki, P., Aggarwal, R., Liau, Z.L., Brwon, E.R. and Melngailis, I., Mater.Res.Soc.Sympo.Proc. 423, 221(1996).10.1557/PROC-423-221Google Scholar
9. Yu.V., Melnik, Nikitina, I.P., Zubrilov, A.S., Sitnikova, A.A., Yu.G., Musikhin and Dmitriev, V.A., Inst. Phys. Conf. Ser. No.142, 1996, p. 863.Google Scholar
10. Volm, D., Oettinger, K., Streibl, T., Kovalev, D., Ben-Chorin, M., Diener, J., Meyer, B.K., Majewski, J., Eckey, L., Hoffmann, A., Amano, H., Akasaki, I., Hiramatsu, K. and Detchprohm, T., Phys.Rev. B 53, 16543 (1996).10.1103/PhysRevB.53.16543Google Scholar
11. Usui, A., Sunakawa, H., Sakai, A. and Yamaguchi, A.A., Jpn.J.Appl.Phys. 36, L899 (1997).10.1143/JJAP.36.L899Google Scholar
12. Ujiie, Y. and Nishinaga, T., Jpn.J.Appl.Phys. 57, L337 (1989).10.1143/JJAP.28.L337Google Scholar
13. Kim, D.-K. and Lee, B.-T., Jpn.J.Appl.Phys. 33, 5870 (1994).10.1143/JJAP.33.5870Google Scholar
14. Kato, Y., Kitamura, S., Hiramatsu, K. and Sawaki, N., J.Cryst.Growth 144, 133 (1994).10.1016/0022-0248(94)90448-0Google Scholar
15. Nam, O.H., Bremser, B., Ward, B., Nemanich, R. and Davis, R.F., Jpn.J.Appl.Phys. 36, L532 (1997).10.1143/JJAP.36.L532Google Scholar
16. Sakai, A., Sunakawa, H. and Usui, A., Appl.Phys.Lett., 71, 2259(1997).Google Scholar
17. Yamaguchi, A.A. (private communication).Google Scholar
18. Sasaoka, C., Sunakawa, H., Kimura, A., Nido, M., Usui, A. and Sakai, A., Proceedings of2nd lnt. Conf Nitride Semiconductors, Tokushima, 1997, p.453.Google Scholar
19. Kuroda, N., Sasaoka, C., Kimura, A., Usui, A. and Mochizuki, Y., Proceedings of 2nd Int. Conf. Nitride Semiconductors, Tokushima, 1997, p.392.Google Scholar