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Bending of Nanoscale Thin Si Film Induced by Growth of Ge Islands: Hut vs. Dome

Published online by Cambridge University Press:  01 February 2011

Minghuang Huang ,
Martin Cuma ,
M. G. Lagally  and
Feng Liu
Minghuang Huang
Affiliation:
University of Utah, Salt Lake City, Utah 84112
Martin Cuma
Affiliation:
University of Utah, Salt Lake City, Utah 84112
M. G. Lagally
Affiliation:
University of Wisconsin, Madison, Wisconsin 53706
Feng Liu
Affiliation:
University of Utah, Salt Lake City, Utah 84112
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Abstract

We perform atomistic simulations to compute bending of freestanding nanoscale thin Si film induced by strained Ge islands. We show that a larger Ge dome island can induce smaller bending than a smaller hut island and explain the surprising experimental observation for growth of Ge islands on patterned silicon-on-insulator substrate (SOI) with Si template layer thinned down to nanometer scale. This counterintuitive bending behavior is caused by strain sharing between the film and the ultra thin substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 791: Symposium Q – Mechanical Properties of Nanostructured Materials and Nanocomposites , 2003 , Q6.4
Copyright
Copyright © Materials Research Society 2004

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References

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