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Applications of In-Situ UHV and High Resolution Tem to the Study of Small Particles

Published online by Cambridge University Press:  21 February 2011

M. Avalos-Borja ,
D. Su ,
F. A. Ponce ,
J. C. Tramontana ,
Q.-H. Guo ,
K. Heinemann ,
H. Poppa  and
M. Boudart
M. Avalos-Borja
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, CA 94305 Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
D. Su
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, CA 94305
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. C. Tramontana
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Q.-H. Guo
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, CA 94305
K. Heinemann
Affiliation:
Eloret Institute, 1178 Maraschino Drive, Sunnyvale, CA 94087
H. Poppa
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, CA 94305
M. Boudart
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, CA 94305
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Abstract

In-situ electron microscopy is a powerful tool for the study of small particles. Since most of the interesting phenomena take place in particles smaller than ˜5 nm, high resolution is highly desirable. In-situ and high resolution conditions are difficult to achieve in a single instrument. We have combined the in-situ UHV capabilities of a modified microscope at Stanford University with the high resolution capabilities of a 200 kV and a UHV-400 kV microscopes at Xerox PARC. Examples are presented, pointing out the advantages of in-situ deposition and treatment, and post deposition ex-situ observation at atomic resolution. Advantages and limitations of this approach are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 81
Copyright
Copyright © Materials Research Society 1989

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References

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