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Application of SC-Simul for Numerical Modeling of the Opto-Electronic Properties of Heterojunction Diodes

Published online by Cambridge University Press:  01 February 2011

R. Brüggemann ,
M. Rösch ,
S. Tardon  and
G.H. Bauer
R. Brüggemann
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, GermanyEmail: [email protected]
M. Rösch
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, GermanyEmail: [email protected]
S. Tardon
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, GermanyEmail: [email protected]
G.H. Bauer
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, GermanyEmail: [email protected]
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Abstract

We apply the publicly available device modeling tool SC-Simul for simulating experiments with user-defined heterojunction diodes to discuss the role of the electric field in solar cells. For amorphous silicon/crystalline silicon heterodiodes, the role of interface defects, an amorphous silicon buffer layer and low-cost crystalline silicon is studied by simulation of current-voltage characteristics and photoluminescence. Photoluminescence is sensitive to the minority carrier density in the volume of the device and can be used to monitor minority carrier properties in these diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A9.3
Copyright
Copyright © Materials Research Society 2005

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References

1Program available - http://www.physik.uni-oldenburg.de/greco/download.html.Google Scholar
2 Rösch, M., Ph.D. Thesis, Universität Oldenburg, 2003 (in German), available online at docserver. bis.uni-oldenburg.de/publikationen/dissertation/2003/roeexp03/roeexp03.htmlGoogle Scholar
3 Brüggemann, R., Rösch, M., J. Optoelectr. Adv. Mat. 7, 65 (2005).Google Scholar
4 Rösch, M., Brüggemann, R., Bauer, G.H., 2nd World Conference on Photovoltaic Solar Energy Conversion, Vienna, Eds. Schmid, J. et al., Joint Research Centre, Ispra, 1998, p. 946.Google Scholar
5 Rösch, M., Unold, T., Pointmayer, R., Bauer, G.H., MRS Symp. Proc. 557, 463 (1999).10.1557/PROC-557-463Google Scholar
6 Bauer, G.H., Brüggemann, R., Tardon, S., Rösch, M., Unold, T., phys. stat. sol. (c) 862, 1308 (2004).Google Scholar
7 Tardon, S., Rösch, M., Brüggemann, R., Unold, T., Bauer, G.H., J. Non-Cryst. Solids 338, 444 (2004).10.1016/j.jnoncrysol.2004.03.015Google Scholar
8 Würfel, P., Physics of Solar cells (VCH, Weinheim, 2004).Google Scholar
9 Wolfe, C.M., Holonyak, N., Stillman, G.E., Physical Properties of Semiconductors (Prentice Hall International, London, 1989), chap. 9 (Heterostructures).Google Scholar
10M.Scherff, L.D., Froitzheim, A., Ulyashin, A., Schmidt, M., Fahrner, W.R., Fuhs, W., International Conference on PV in Europe - from PV Technology to Energy Solutions, Rome, Eds. Bal, J.-L. et al., ETA, Florence, 2002, p. 216.Google Scholar
11 Stangl, R., Froitzheim, A., Kriegel, M., Brammer, T., Kirste, S., Elstner, L., Stiebig, H., Schmidt, M., Fuhs, W., 19th European Photovoltaic Solar Energy Conference, Paris, Eds. Hoffmann, W. et al., WIP, Munich, 2004, p. 1497.Google Scholar
12 Martín, I., Vetter, M., Orpella, A., Voz, C., Puigdollers, J., Alcubilla, R., Kharchenko, A. V., Cabarrocas, P. Roca i, Appl. Phys. Lett. 84, 1474 (2004).10.1063/1.1647702Google Scholar
13 Jensen, N., Hausner, R. M., Bergmann, R. B., Werner, J. H., Rau, U., Progress in Photovoltaics: Research and Applications 10, 1 (2002).10.1002/pip.398Google Scholar
14 Kuwano, Y., Nakano, S., Takahama, T., Masuyama, T., Isomura, M., Nakamura, N., Haku, H., Nishikuni, M., Nishiwaki, H., Tsuda, S., Materials Research Society Symposia Proceedings 258, 857 (2001).10.1557/PROC-258-857Google Scholar