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Annealing Studies of Visible Light Emission from Silicon Nanocrystals Produced by Implantation
Published online by Cambridge University Press: 15 February 2011
Abstract
The annealing behavior of silicon implanted SiO2 layers is studied using continuous and time-gated photoluminescence (PL). Two PL emission bands are observed. A band centered at 560 nm is present in as implanted samples and it is still observed after 1000 °C annealing. The emission time is fast (0.2 -2 ns). A second band centered at 780 nm further increases when hydrogen annealing was performed. The emission time is long (1 μs - 0.3 ms).
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- Copyright © Materials Research Society 1997
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