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Annealing of Ion Implanted Tin in Silicon: a RBS/ Channeling, Mössbauer Spectroscopy and Tem Investigation of Solubility and Residual Defects.

Published online by Cambridge University Press:  25 February 2011

P. Kringhøj ,
A. Nylandsted Larsen  and
J. W. Petersen
P. Kringhøj
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
A. Nylandsted Larsen
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
J. W. Petersen
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
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Abstract

By combining RBS/channeling, Mössbauer spectroscopy, and TEM measurements on implanted Sn in Silicon, the solid solubility has been determined at 1025°C, 1075°C, and 1188°C to be respectively, 6.1 , 4.8 , 3.1·1020 cm-3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 585
Copyright
Copyright © Materials Research Society 1990

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References

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