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Activation of Yb Luminescence in GaAs by Group VI Elements Codoping

Published online by Cambridge University Press:  10 February 2011

V. M. Konnov ,
T. V. Larikova ,
N. N. Loyko ,
V. A. Dravin ,
V. V. Ushakov  and
A. A. Gippius
V. M. Konnov
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, [email protected]
T. V. Larikova
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, [email protected]
N. N. Loyko
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, [email protected]
V. A. Dravin
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, [email protected]
V. V. Ushakov
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, [email protected]
A. A. Gippius
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, [email protected]
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Abstract

Yb in GaAs is generally believed to be optically inactive due to very low fraction of Yb in substitutional position. In the present work it is demonstrated that Yb can be rendered optically active in GaAs if it is incorporated in three-component complexes (Yb+O+S/Se/Te).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 187
Copyright
Copyright © Materials Research Society 1996

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