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Absorption Coefficient Measurements of AlGaAs/GaAs Iieterojunction Structures Using Transient Piiotoluminescence Spectroscopy

Published online by Cambridge University Press:  21 February 2011

K. H. Siek ,
D. L. Doering ,
R. N. Sacks  and
L. L. Tongson
K. H. Siek
Affiliation:
Department of Physics, Wesleyan University, Middletown, CT 06459-0155
D. L. Doering
Affiliation:
Department of Physics, Wesleyan University, Middletown, CT 06459-0155
R. N. Sacks
Affiliation:
United Technologies Research Center, East Hartford, CT 06108
L. L. Tongson
Affiliation:
Department of Physics and Earth Sciences, Central Connecticut State University, New Britain, CT 06050
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Abstract

Optical properties of quantum well structures, specifically (Al,Ga)As/GaAs heterojunction structures, have been studied using transient photoluminescence spectroscopy. The (Al,Ga)As/GaAS heterojunction structures that have been studied are a Ga0.7Al0.3As/GaAs single quantum well and a device structure which consists of both a thin single quantum well and a buried superlattice structure. Transient photoluminescence spectroscopy has been done using a pulsed laser system and luminescence spectra were obtained as a function of laser wavelength and the incident angle. The results show that PL from the single well occurs at the GaAs band gap energy with a wavelength at 860 nm while the buried superlattice emits at 785nm. The relative intensity of these two signals is dependent on the layer thicknesses, excitation wavelength and reflectivity as a function of incident angle. The absorption coefficient of the composite structure can be determined from these measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 549
Copyright
Copyright © Materials Research Society 1994

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