Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-07T23:05:19.625Z Has data issue: false hasContentIssue false
  • English
  • Français

Wide Band Gap a-Si:H Based Ihgh Gain Vidicon Devices Prepared by Chemical Anniealing

Published online by Cambridge University Press:  10 February 2011

W. Futako ,
T. Sugawara ,
T. Kamiya ,
C.M. Fortmann  and
I. Shimizu
W. Futako
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 227, JAPAN, [email protected]
T. Sugawara
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 227, JAPAN
T. Kamiya
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 227, JAPAN
C.M. Fortmann
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 227, JAPAN
I. Shimizu
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 227, JAPAN
Get access

Abstract

Previously it was shown that high quality wide gap hydrogenated amorphous silicon material could be prepared by a layer-by-layer technique involving hydrogen chemical annealing. Using this wide gap material, high electric field, n-i-p diode devices were fabricated. Reverse bias dark current was suppressed by optimization of the n-layer doping level (250ppm) and the thickness (2000Å). Working vidicon type device were prepared, tested, and optimized by further reduction in the high reverse bias leakage current. Vidicon devices showed very promising performance; however, at the present stage of development some point defects were observable at the highest reverse bias voltages probed (∼-6×105 V/cm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 357
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nakamura, K., Yoshino, K., Takeoka, S. and Shimizu, I., Jpn.J.Appl.Phys. 34, p442 (1995)Google Scholar
2 Yoshino, K., Futako, W., Wasai, Y. and Shimizu, I., Proceeding MRS Spring Meeting (1996)Vol. 420, P.335 Google Scholar
3 Futako, W., Yoshino, K., Fortmann, C.M. and Shimizu, I., to be publishedGoogle Scholar
4 Takasaki, Y., Tsuji, K., Hirai, T., Maruyama, E., Tanioka, K., Yamazaki, J., Shidaraand, K. Taketoshi, K., Proceeding MRS Spring Meeting (1988) Vol. 118, P. 387 Google Scholar
5 Sawada, K., Akata, S., Takeuchi, T. and Ando, T., Appl.Phys.Lett., 68, p1835 (1996)Google Scholar
6 Miyoshi, M., Ishioka, T., Hattori, K., Okamoto, K. and Hamakawa, Y., Appl.Phys.Lett., 72, p3186(1992)Google Scholar
7 Vanderhaghen, R., Hulin, D., Cuzeau, S., White, J.O., Proceeding MRS Spring Meeting (1997) Vol. 467, P. 245 Google Scholar
8 Futako, W., Kamiya, T., Fortmann, C.M. and Shimizu, I., J.Non-Cryst. Solids, 1998 in pressGoogle Scholar