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Thermoelectric Properties of SiO2/SiO2+Ag Nanolayered Multilayer Films Effected by MeV Si Ions

Published online by Cambridge University Press:  01 February 2011

S. Budak*
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
Cydale Smith
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
John Chacha
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
Marcus Pugh
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
Hervie Martin
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
T. Langham
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
B. Harrell
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
Kaveh Heidary
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
R. B. Johnson
Affiliation:
[email protected], Alabama A&M University, Physics, Normal, Alabama, United States
Ying Yang
Affiliation:
[email protected], University of Wisconsin, 3Department of Nuclear Engineering, Madison, Wisconsin, United States
Claudiu Muntele
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
D. ILA
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
*
*Corresponding author: S. Budak; Tel.: 256-372-5894; Fax: 256-372-5855; Email: [email protected]
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Abstract

We have prepared 100 periodic nano-layers of SiO2/AgSiO2 with Au layer deposited on both sides as metal contacts. The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is 3.3 nm thick. The purpose of this research is to tailor the figure of merit of the thermoelectric materials generated from the nanolayers of nanocrystals of Ag with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ions bombardment taking advantage of energy deposited in the MeV ion track to nucleate nanoclusters. The electrical and thermal properties of the nanolayered structures were studied before and after 5 MeV Si ions bombardment at various fluences to form nanocrystals. In addition to thermoelectric properties, some optical properties of the SiO2/SiO2+Ag multi-layer superlattice films have been studied.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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