Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-24T15:54:23.035Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of Fulleride Thin Films with Ultra-low Thermal Conductivity.

Published online by Cambridge University Press:  22 August 2011

Michael H. Check ,
Douglas S. Dudis ,
John B. Ferguson ,
Jamie J. Gengler ,
Jianjun Hu ,
Zachary S. Votaw  and
Andrey A. Voevodin
Michael H. Check
Affiliation:
Universal Technology Corporation, 1270 North Fairfield Road, Dayton, OH 45432 Thermal Sciences and Materials Branch, Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), 2941 Hobson Way, Wright-Patterson AFB, OH 45433
Douglas S. Dudis
Affiliation:
Thermal Sciences and Materials Branch, Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), 2941 Hobson Way, Wright-Patterson AFB, OH 45433
John B. Ferguson
Affiliation:
Thermal Sciences and Materials Branch, Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), 2941 Hobson Way, Wright-Patterson AFB, OH 45433
Jamie J. Gengler
Affiliation:
Thermal Sciences and Materials Branch, Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), 2941 Hobson Way, Wright-Patterson AFB, OH 45433 Spectral Energies,LLC, 5100 Springfield St., Suite 301, Dayton, OH 45431
Jianjun Hu
Affiliation:
University of Dayton Research Institute, 300 College Park, Dayton, OH 45469
Zachary S. Votaw
Affiliation:
Thermal Sciences and Materials Branch, Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), 2941 Hobson Way, Wright-Patterson AFB, OH 45433 SOCHE, 3155 Research Blvd., Suite 204, Dayton, OH 45420
Andrey A. Voevodin
Affiliation:
Thermal Sciences and Materials Branch, Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), 2941 Hobson Way, Wright-Patterson AFB, OH 45433
Get access

Abstract:

In the past two decades, there has been growing interests in the design and improvement of thermoelectric (TE) materials and devices largely due to their potential use in technologies such as: 1) the conversion of waste heat to electricity, 2) solid-state refrigeration and heating, 3) biomedical batteries, and 4) power sources for both ground and space-based electronics.1 Recent research has suggested that by using nanotechnology (i.e. nanostructuring / nanoengineering) large advances can be gained in controlling interfaces to hinder thermal transport while allowing electrical movement. Thin film structuring of thermoelectric materials potentially offers several advantages over bulk thermoelectric materials especially for cooling applications. Furthermore, others have advocated that by making thermoelectric materials very small, one can achieve an enhanced ZT (the thermoelectric figure of merit) due to quantum confinement effects.2-5 The structure and physical properties of doped fullerene materials were investigated for use as electrically conducting phonon blocking layers. The synthesis and thermal properties of ZnxC60 thin films are reported. Preliminary results have shown the formation of amorphous fullerides structures with thermal conductivities as low as 0.13 Wm-1K-1. Physical and structural measurements (e.g. Electron Microscopy, Electron Diffraction, and Raman Spectroscopy) will be reported detailing the unique structure-property relationships in these materials.

Keywords

Znthin filmthermal conductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1329: Symposium I – Nanoscale Heat Transfer–Thermoelectrics, Thermophotovoltaics and Emerging Thermal Devices , 2011 , mrss11-1329-i10-27
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES:

1. Tritt, T. M.; Subramanian, M. A. Thermoelectric materials, phenomena, and applications: a bird’s eye view. MRS Bulletin 2006, 31(3), 188.Google Scholar
2. Balandin, A.; Wang, K. L. Effect of phonon confinement on the thermoelectric figure of merit of quantum wells. Journal of Applied Physics 1998, 84(11), 6149–6153.Google Scholar
3. Bulusu, A.; Walker, D. G. Effect of quantum confinement on the thermoelectric properties of semiconductor 2D thin films and 1D wires. In Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference; Institute of Electrical and Electronics Engineers Inc.: San Diego, CA, United states, 2006; pp 1299–1305.Google Scholar
4. Hicks, L. D.; Harman, T. C.; Sun, X.; Dresselhaus, M. S. Experimental study of the effect of quantum-well structures on the thermoelectric figure of merit. Physical Review B (Condensed Matter) 1996, 53(16), 10493–10496.Google Scholar
5. Huber, T. E.; Nikolaeva, A.; Gitsu, D.; Konopko, L.; Graf, M. J. Quantum confinement and surface-state effects in bismuth nanowires. Physica E 2007, 37(1-2), 194–199.Google Scholar
6. Chen, G.; Dresselhaus, M. S.; Dresselhaus, G.; Fleurial, J. P.; Caillat, T. Recent developments in thermoelectric materials. International Materials Reviews 2003, 48(1), 45–66.Google Scholar
7. Vashaee, D.; Yan, Z.; Shakouri, A.; Gehong, Z.; Yi-Jen, C. Cross-plane Seebeck coefficient in superlattice structures in the miniband conduction regime. Physical Review B (Condensed Matter and Materials Physics) 2006, 74(19), 195315–1.Google Scholar
8. Venkatasubramanian, R.; Siivola, E.; Colpitts, T.; O’Quinn, B. Thin-film thermoelectric devices with high room-temperature figures of merit. Nature 2001, 413(6856), 597–602.Google Scholar
9. Zebarjadi, M.; Bian, Z.; Singh, R.; Shakouri, A.; Wortman, R.; Rawat, V.; Sands, T. Thermoelectric transport in a ZrN/ScN superlattice. Journal of Electronic Materials 2009, 38(7), 960–963.Google Scholar
10. Schmidt, A.; Chiesa, M.; Chen, X.; Chen, G. An optical pump-probe technique for measuring the thermal conductivity of liquids. Review of Scientific Instruments 2008, 79 (6).Google Scholar
11. Bethune, D. S.; Meijer, G.; Tang, W. C.; Rosen, H. J. The vibrational Raman spectra of purified solid films of C60 and C70. Chemical Physics Letters 1990, 174(3-4), 219–222.Google Scholar
12. Li, Y.; Wang, Y.; Xu, W.; Hou, J. G.; Zhang, Y. H. Study of microstructure and interfacial interaction of Al-C60 co-evaporated films. In Physica C (Netherlands); Elsevier: Netherlands, 1997; pp 737–738.Google Scholar
13. Talyzin, A. V.; Jansson, U. A comparative Raman study of some transition metal fullerides. Thin Solid Films 2003, 429(1-2), 96–101.Google Scholar
14. Wang, K. A.; Wang, Y.; Zhou, P.; Holden, J. M.; Ren, S. l.; Hager, G. T.; Ni, H. F.; Eklund, P. C.; Dresselhaus, G.; Dresselhaus, M. S. Raman scattering in C_{60} and alkali-metal-doped C_{60} films. Phys. Rev. B 1992, 45(4), 1955.Google Scholar
15. Chase, S. J.; Mitch, M. G.; Lannin, J. S.; Olson, C. G. Effects of disorder on alkali-doped C_{60} photoemission and Raman spectra. Phys. Rev. B 1998, 58(23), 15491.Google Scholar
16. Cahill, D. G. Analysis of heat flow in layered structures for time-domain thermoreflectance. Review of Scientific Instruments 2004, 75(12), 5119–5122.Google Scholar
17. Markin, A.; Smirnova, N.; Boronina, I.; Ruchenin, V.; Lyapin, A. Thermodynamic properties of graphite-like nanostructures prepared by thermobaric treatment of fullerite. Russian Chemical Bulletin 2008, 57(9), 1975–1980.Google Scholar