Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-12-01T01:21:35.011Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis and Thermoelectric Properties of CoP3

Published online by Cambridge University Press:  21 March 2011

Virgil B. Shields  and
Thierry Caillat
Virgil B. Shields
Affiliation:
Jet Propulsion Laboratory California Institute of Technology Pasadena, CA 91109, USA
Thierry Caillat
Affiliation:
Jet Propulsion Laboratory California Institute of Technology Pasadena, CA 91109, USA
Get access

Abstract

In an effort to expand the range of operation for highly efficient, segmented thermoelectric unicouples currently being developed at the Jet Propulsion Laboratory (JPL), skutterudite phosphides are being investigated as potential high temperature segments to supplement antimonide segments that limit the use of these unicouples at a hot-side temperature of about 873-973 K. We report here on the synthesis and transport properties of one of these phosphide skutterudite materials, CoP3. Large amounts of cobalt triphosphide have been prepared by direct reaction from stochiometric powders at synthesis temperatures ranging from 873 to 1223 K. The synthesized powders were analyzed by x-ray diffractometry and hot pressed at 1273 K. The samples were analyzed by microprobe analysis and electrical conductivity, Seebeck voltage and thermal conductivity measurements were performed. The thermoelectric properties are presented and discussed as a function of temperature up to 1000 K. Initial thermal stability results are presented to assess the potential of this material for high temperature operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G2.5
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Caillat, T., Borshchevsky, A., Fleurial, J.-P., Proceedings of the Eleventh International Conference on Thermoelectrics, Arlington, Texas, 1993, edited by Rao, K. R. (University of Texas Press, Arlington, 1993), p. 98.Google Scholar
2. Morelli, D. T., Caillat, T., Fleurial, J.-P., Borshchevsky, A., Vandersande, J., Chen, B., and Uher, C., Phys. Rev. B 51, 9622 (1995).Google Scholar
3. Slack, G. A. and Tsoukala, V. G., J. Appl. Phys. 76, 1665 (1994).Google Scholar
4. Caillat, T., Fleurial, J. -P., Snyder, G. J., and Borshchevsky, A., in Proceeding of 20th International Conference on Thermoelectrics, Beijing, China, to be published (2001)Google Scholar
5. Uher, C., Semiconductors and Semimetals, Tritt, T.M. (Ed.), Academic Press, 69, 139 (2001).Google Scholar
6. DeMattei, R. C., Watcharapasorn, A., Feigelson, R. S., J. Electro. Soc., 148 (9), D109 (2001).Google Scholar
7. Watcharapasorn, A., DeMattei, R. C., Feigelson, R. S., Caillat, T., Borshchevsky, A., Snyder, G. J., Fleurial, J.-P., J. Appl. Phys., 86 (11), 6213 (1999).Google Scholar
8. Phosphorus and Its Compounds, edited by Wazer, John R. Van, (Interscience Publishers, Inc., New York, NY, 1958) pp. 165–171.Google Scholar
9. Rundqvist, S., Acta Chemica Scandinavica, 16 287 (1962).Google Scholar
10. Caillat, T., Borshchevsky, A., and Fleurial, J. -P., J. Appl. Phys. 80, 4442, (1996)Google Scholar
11. Caillat, T. and Fleurial, J.-P. (unpublished results).Google Scholar