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Spectroscopic Mapping Ellipsometry of Graphene Grown on 3C SiC

Published online by Cambridge University Press:  29 February 2012

Alexander Boosalis ,
Tino Hofmann ,
Vanya Darakchieva ,
Rositza Yakimova ,
Tom Tiwald  and
Mathias Schubert
Alexander Boosalis
Affiliation:
Department of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A.
Tino Hofmann
Affiliation:
Department of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A.
Vanya Darakchieva
Affiliation:
Department of Physics, Linköping University, Linköping Sweden.
Rositza Yakimova
Affiliation:
Department of Physics, Linköping University, Linköping Sweden.
Tom Tiwald
Affiliation:
J.A. Woollam Co., Lincoln, Nebraska, U.S.A.
Mathias Schubert
Affiliation:
Department of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A.
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Abstract

Spectroscopic mapping ellipsometry measurements in the visible spectrum (1.25 to 5.35 eV) are performed to determine the lateral variations of epitaxial graphene properties as grown on 3C SiC. Data taken in the visible spectrum is sensitive to both the Drude absorption of free charge carriers and the characteristic exciton enhanced van Hove singularity at 5 eV. Subsequent analysis with simple oscillator models allows the determination of physical parameters such as free charge carrier scattering time and local graphene thickness with a lateral resolution of 50 microns.

Keywords

dielectric propertiesepitaxyC
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1407: Symposium AA – Carbon Nanotubes, Graphene and Related Nanostructures , 2012 , mrsf11-1407-aa20-43
Copyright
Copyright © Materials Research Society 2012

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