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Si Ion Implantation for Secondary Defect Reduction in Simox Material

Published online by Cambridge University Press:  22 February 2011

S.L. Ellingboe  and
M.C. Ridgway
S.L. Ellingboe
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
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Abstract

A novel methodology for altering the amount and/or nature of post-anneal disorder in SIMOX substrates has been investigated. A pre-anneal, secondary Si-ion implant (with an ion range less than that of the primary O-ion implant) is shown to effectively getter Si interstitials to the near-surface region during annealing. As a consequence, post-anneal disorder at the front. Si/SiO2 interface is significantly reduced. Alternatively, a Si-ion implant with an ion range greater than that of the O-ion implant can alter the post-anneal disorder at the back Si/SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 735
Copyright
Copyright © Materials Research Society 1994

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References

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