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Selection and Design of Precursors for the MOCVD of Lead Scandium Tantalate

Published online by Cambridge University Press:  10 February 2011

A.C Jones ,
H.O. Davies ,
T.J. Leedham ,
M.J. Crosbie ,
P.J. Wright ,
P.O'. Brien  and
K.A. Fleeting
A.C Jones
Affiliation:
Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, [email protected]
H.O. Davies
Affiliation:
Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, [email protected]
T.J. Leedham
Affiliation:
Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, [email protected]
M.J. Crosbie
Affiliation:
Defence, Evaluation and Research Agency, St. Andrews Road, Malvern, Worcestershire, WR14 3PS, UK
P.J. Wright
Affiliation:
Defence, Evaluation and Research Agency, St. Andrews Road, Malvern, Worcestershire, WR14 3PS, UK
P.O'. Brien
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, London, SW7 2BP, UK
K.A. Fleeting
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, London, SW7 2BP, UK
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Abstract

Metalorganic chemical vapour deposition (MOCVD) is a promising technique for the deposition of the pyroelectric oxide lead scandium tantalate, Pb(Sc0.5Ta0.5)O3. In order to exploit the full potential of the method, it is important to identify the optimum combination of precursors so that process parameters and film properties are optimised. In this paper, the molecular design of new, more compatible Ta and Sc oxide precursors is described and it is shown how the use of carefully matched precursors allows the growth of Pb(Sc0.5Ta0.5)O3 in the required perovskite phase at low substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 51
Copyright
Copyright © Materials Research Society 2000

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