Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-27T03:09:30.448Z Has data issue: false hasContentIssue false
  • English
  • Français

Reactive Ion Etching of Indium-Based III-V Materials using CH4-H2-Ar Mixtures

Published online by Cambridge University Press:  26 February 2011

A. Fathimulla ,
T. Loughran  and
J. Bates
A. Fathimulla
Affiliation:
Allied-Signal Aerospace Company Aerospace Technology Center 9140 Old Annapolis Road Columbia, Maryland 21045
T. Loughran
Affiliation:
Allied-Signal Aerospace Company Aerospace Technology Center 9140 Old Annapolis Road Columbia, Maryland 21045
J. Bates
Affiliation:
Allied-Signal Aerospace Company Aerospace Technology Center 9140 Old Annapolis Road Columbia, Maryland 21045
Get access

Extract

Dry etching of indium-based III–V materials in chlorine-based gases is difficult because of the low vapor pressure of the indium chloride by-product. Recently, reactive ion etching of InP(1,2), and GaAs(3,4) using methane, hydrogen and argon mixture in which volatile organometallic group III compounds are formed has been employed. In this paper, we report the reactive ion etching of indium-based materials using CH4:H2:Ar and SiCl4:Ar mixtures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 501
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Niggebrugge, U., Klug, M. and Garus, G., ”A Novel Process for Reactive Ion Etching on InP, Using CH4/H2 ,” GaAs and Related Compounds, Karuizawa, Japan, 1985.Google Scholar
2. Henry, L., Vaudry, C. and Granjoux, P., ”Novel Process for Integration of Optoelectronic Devices Using Reactive Ion Etching Without Chlorinated Gas,” Electronic Letts., 23, p. 1253 (1987).CrossRefGoogle Scholar
3. Cheung, R., Thomas, S., Beamont, S.P., Doughty, G., Law, V. and Wilkinson, C.D.W., ”Reactive Ion Etching of GaAs Using Mixture of Methane and Hydrogen,” Electron Letts., 23, p. 857 (1987).CrossRefGoogle Scholar
4. Collot, P., Gaonach, C. and Proust, N., ”Electrical Damage Introduced in GaAs by Reactive Ion Etching Using CH4 /H2 Mixture,” This volume.Google Scholar