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Rare-Earth Doped Epitaxial InGaP and its Optical Properties

Published online by Cambridge University Press:  10 February 2011

B. W. Wessels
B. W. Wessels*
Affiliation:
Dept. of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Ill. USA
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Abstract

The optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 247
Copyright
Copyright © Materials Research Society 1996

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