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Raman Scattering Characterization of Implanted ZnO

Published online by Cambridge University Press:  01 February 2011

Esther Alarcon-Llado ,
Ramon Cusco ,
Luis Artus ,
German Gonzalez-Diaz ,
Ignacio Martil ,
Juan Jimenez ,
Buguo Wang  and
Michael Callahan
Esther Alarcon-Llado
Affiliation:
[email protected], C.S.I.C., Inst. Jaume Almera, C. Sole Sabaris sn, Barcelona 08028, Spain
Ramon Cusco
Affiliation:
[email protected], C.S.I.C., Inst. Jaume Almera, C. Sole Sabaris sn, Barcelona, 08028, Spain
Luis Artus
Affiliation:
[email protected], C.S.I.C., Inst. Jaume Almera, C. Sole Sabaris sn, Barcelona, 08028, Spain
German Gonzalez-Diaz
Affiliation:
[email protected], Univ. Complutense, Dep. Fisica Aplicada III, Madrid, 28040, Spain
Ignacio Martil
Affiliation:
[email protected], Univ. Complutense, Dep. Fisica Aplicada III, Madrid, 28040, Spain
Juan Jimenez
Affiliation:
[email protected], Univ. Valladolid, Dep. Fisica Materia Condensada, P. del Cauce sn, Valladolid, 47011, Spain
Buguo Wang
Affiliation:
[email protected], Solid State Scientific Corporation, 27-2 Wright Road, Hollis, NH, 03049, United States
Michael Callahan
Affiliation:
[email protected], Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA, 01731-2909, United States
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Abstract

In this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to high doses and Raman spectra were obtained prior and after rapid thermal annealing (RTA). Characteristic disorder-activated modes are observed in the spectra that can be used to assess the degree of lattice damage. ZnO samples were also implanted with native Zn+ and O+ ions under similar conditions to study specific effects of implantation with N+ and P+. As revealed by the intensity of disorder-activated bands, the implantation induced lattice damage is considerably higher for Zn+ than for the lighter O+ ion. In samples implanted with N+ additional Raman peaks emerge that are not observed either in the samples implanted with the native Zn+ and O+ ions or in the samples implanted with P+, thus pointing to a local vibrational mode of N or a N complex as the origin of these modes. Disorder-activated features are fully removed by RTA, indicating a high degree of lattice recovery by RTA even for the heavily damaged ZnO samples implanted with Zn+.

Keywords

Raman spectroscopyII-VIion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K07-24
Copyright
Copyright © Materials Research Society 2007

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References

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