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Photoluminescence Study of ZnO Nanosheets with embedded Cu Nanocrystals.

Published online by Cambridge University Press:  19 November 2013

Aaron I. Diaz Cano  and
Brahim El Filali
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Abstract

In this work a simple method to produce the ZnO nanosheets (NSs) with inclusions of Cu nanocrystals by means of electrochemical etching without the necessity of any surfactant has been presented. The Raman spectroscopy demonstrates that the amorphous samples of ZnO-Cu present appreciable changes in its vibrational behavior after the thermal treatment at 400°C in ambient atmosphere. The study of Photoluminescence (PL) shows monotonous increasing the bands centered in 3.07, 2.41, 2.03 and 1.57 eV versus etching time in freshly prepared samples. The intensity variation of the PL bands, the changes in vibrational behavior, as well as the impact of the copper content and preparation conditions allow identifying emission inside the visible spectral range related to the surface defects that is interesting for the future possible application this ZnO system in room temperature “white” light-emitting diodes.

Keywords

luminescenceZnO nanosheetsCu nanocrystals
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 101 - 106
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Diaz Cano, A. I., El Filali, B., V Torchynska, T. and Casas Espinola, J. L., J. of Phys. and Chem. of Sol., 74, 431 (2013).CrossRefGoogle Scholar
Diaz Cano, A. I., El Filali, B., V Torchynska, T. and Casas Espinola, J. L., Physica E, 51, 24 (2013).CrossRefGoogle Scholar
Liu, Z.F., Shan, F.K., Sohn, J.Y., Kim, S.C., Kim, G.Y., Li, Y.X., Yu, Y.S., J. Electroceram. 13 183 (2004).Google Scholar
Qiu, D.J., Wu, H.Z., Feng, A.M., Lao, Y.F., Chen, N.B., Xu, T.N., Appl. Surf. Sci. 222 263 (2004).Google Scholar
Shan, F.K., Kim, B.I., Liu, G.X., Liu, Z.F., Sohn, J.Y., Lee, W.J., Shin, B.C., Yu, Y.S., J. Appl. Phys. 95 4772 (2004).Google Scholar
Dahany, P., Fleurovy, V., Thurianz, P., Heitzz, R., Hoffmannz, A., Broserz, I., J. Phys.: Condens. Matter 10 2007 (1998).Google Scholar
Gruber, D., Kraus, F., Muller, J., Sensors and Actuators B 92 81 (2003).Google Scholar
Reshchikov, M.A., Morkoc, H., Nemeth, B., Nause, J., Xie, J., Hertog, B., Osinsky, A., Physica B. Condensed Matter 401–402 358(2007).Google Scholar
Dybic, M., Ostapenko, S., Torchynska, T.V., Velazquez Lozada, E., App. Phys. Lett. 84 (25) 5165 (2004).Google Scholar
Torchynska, T.V., Diaz Cano, A.I., Dybic, M., Ostapenko, S., Mynbaeva, M., Physica B: Condensed Matter 376–377 367 (2006).Google Scholar
Dybic, M., Ostapenko, S., Torchynska, T.V., Velazquez Lozada, E., Appl. Phys. Lett. 84(25), 5165–5167 (2004).Google Scholar
Manjon, F.J., Mari, B., Serrano, J., Romero, A.H., J. Appl. Phys. 97 053516 (2005).Google Scholar
Ashkenov, N., Mbenkum, B. N., Bundesmann, C., Riede, V., Lorenz, M., Spemann, D., Kaidashev, E. M., Kasic, A., Schubert, M., Grundmann, M., Wagner, G., Neumann, H., Darakchieva, V., Arwin, H., and Monemar, B., J.Appl.Phys. 93, 126 (2003).Google Scholar
scott, J.F., Phys. Rev. B, 2, 1209 (1970).CrossRefGoogle Scholar
Ghoopum, S., Hongsith, N., Mangkorntong, P., Physica E, 39, 53–56 (2007)Google Scholar
West, C., Robbins, D.J., Dean, P.J., Hays, W., Physica B, 116, 492 (1983).CrossRefGoogle Scholar
Dingle, R., Phys. Rev. Lett. 23, 579 (1969).Google Scholar
Garces, N.Y., Wang, L., Bai, L., Giles, N.C., Halliburton, E., Cantwell, G., App. Phys. Lett. 81, 622 (2002).Google Scholar
Djurišic, A.B., Choy, W.C.H., Roy, V.A.L., Leung, Y.H., Kwong, C.Y.. Cheah, K.W., Gundu Rao, T.K., Chan, W.K., Lui, H.F., Surya, C., Adv. Funct. Mater. 14, 856 (2004).Google Scholar
Reshchikova, M.A., Morkoc, H., Nemeth, B., Nause, J., Xie, J., Hertog, B., Osinsky, A., Physica B, Condensed Matter, 401–402, 358 (2007).Google Scholar
Patra, M.K., Manzoor, K., Manoth, M., Vadera, S.P., Kumar, N., Lumin, J.. 128(2) 267–272 (2008).CrossRefGoogle Scholar
Zhang, D.H., Xue, Z.Y., Wang, Q.P., Phys, J.. D: Appl. Phys. 35(21) 2837–2840 (2002).Google Scholar
Djuris, A. B., Ng, A.M.C., Chen, X.Y., Progress in Quantum Electronics 34. 191 (2010).Google Scholar
Voss, T., Bekeny, C., Wischmeier, L., Gafsi, H., Borner, S., Schade, W., Mofor, A.C., Bakin, A. and Waag, A., Appl. Phys. Lett. 89, 182107 (2006).Google Scholar