Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-04T17:53:35.325Z Has data issue: false hasContentIssue false
  • English
  • Français

New Developments in the Dynamic Mechanical Analysis of Thin-Layer Materials

Published online by Cambridge University Press:  26 February 2011

B.S. Berry  and
W.C. Pritchet
B.S. Berry
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
W.C. Pritchet
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Get access

Abstract

The vibrating-membrane configuration represents an important new approach to the dynamic mechanical analysis of thin-layer materials. The method offers a convenient capability for high-resolution stress measurements over a wide temperature range, and can be combined if desired with internal friction measurements for the detection of defect-related relaxation peaks. Illustrative results are given for the thermomechanical behavior of silicon, silicon carbide, and synthetic diamond membranes, and for the moisture swelling of polyimide films. A detailed study of hydrogen-boron point defects in silicon is in progress, using both internal stress and internal friction measurements, and work on membranes has been supplemented significantly by the use of vibrating-string and ultra-thin vibrating-reed samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 179
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Berry, B.S., in The Encyclopedia of Materials Science and Engineering, edited by Bever, M.B. (Pergamon, Oxford, 1986) Vol. 4, pp. 2905–2910.Google Scholar
2. Nowick, A.S. and Berry, B.S., Anelastic Relaxation in Crystalline Solids (Academic Press, New York, 1972).Google Scholar
3. Berry, B.S., in Diffusion Phenomena in Thin Films and Microelectronic Materials, edited by Gupta, D. and Ho, P.S. (Noyes Press, Park Ridge, New Jersey, 1988) pp. 73–145.Google Scholar
4. Karnezos, M., J. Vac. Sci. Technol. B 4, 226 (1986).Google Scholar
5. Rayleigh, Lord, Theory of Sound, (Dover, New York, 1945) Chap. 9.Google Scholar
6. McLachlan, N.W., The Theory of Vibrations. (Dover, New York, 1951) Chap. 8.Google Scholar
7. Berry, B.S. and Pritchet, W.C., J. Appl. Phys. 67, 3661 (1990).Google Scholar
8. Uzoh, C., Maldonado, J.R. and Angilello, J., J. Vac. Sci. Technol. B 5, 226 (1987).Google Scholar
9. Berry, B.S. and Pritchet, W.C., J. Vac. Sci. Technol. A - in press.Google Scholar
10. Berry, B.S. and Pritchet, W.C., IBM J. Res. Dev. 19, 334 (1975).Google Scholar
11. Berry, B.S. and Pritchet, W.C., Rev. Sci. Instr. 54, 254 (1983).Google Scholar
12. Berry, B.S., Pritchet, W.C. and Uzoh, C.E., J. Vac. Sci. Technol. B 7, 1565 (1989).Google Scholar
13. Berry, B.S., Pritchet, W.C., Cuomo, J.J., Guarnieri, C.R. and Whitehair, S.J., Appl. Phys. Lett. 57, 302 (1990).Google Scholar
14. Berry, B.S., Pritchet, W.C., Fuentes, R.I. and Babich, I., J. Mater. Res. 6, 1061 (1991).Google Scholar
15. Sacher, E. and Susko, J.R., J. Appl. Polymer Sci. 23, 2355 (1979).Google Scholar
16. Denteneer, P.J.H., Walle, C.G. van de and Pantelides, S.T., Phys. Rev. B 39, 10809 (1989).Google Scholar