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Metal Transport and Loss in Hafnium and Lanthanum Aluminate Films on Si Hampered by Thermal Nitridation

Published online by Cambridge University Press:  01 February 2011

Leonardo Miotti ,
Carlos Driemeier ,
Felipe Tatsch ,
Cláudio Radtke ,
Israel Jacob Rabin Baumvol ,
Edon Vincent ,
Marie Christine Hugon  and
Bernard Agius
Leonardo Miotti
Affiliation:
[email protected], Universidade Federal do Rio Grande do Sul, Instituto de Física, Av. Bento Gonçalves, 9500, Porto Alegre, RS, 91509-900, Brazil, 55 51 33166485, 55 51 33166510
Carlos Driemeier
Affiliation:
[email protected], Universidade Federal do Rio Grande do Sul, Instituto de Física, Av. Bento Gonçalves, 9500, Porto Alegre, RS, 91509-900, Brazil
Felipe Tatsch
Affiliation:
[email protected], Universidade Federal do Rio Grande do Sul, Instituto de Física, Av. Bento Gonçalves, 9500, Porto Alegre, RS, 91509-900, Brazil
Cláudio Radtke
Affiliation:
[email protected], Universidade Federal do Rio Grande do Sul, Pós-Graduação em Microeletrônica, Av. Bento Gonçalves, 9500, Porto Alegre, RS, 91509-900, Brazil
Israel Jacob Rabin Baumvol
Affiliation:
[email protected], CCET and Universidade Federal do Rio Grande do Sul, Instituto de Física, Av. Bento Gonçalves, 9500, Porto Alegre, RS, 91509-900, Brazil
Edon Vincent
Affiliation:
[email protected], Université Paris Sud, Laboratoire de Physique des Gaz et des Plasmas, Orsay, N/A, 91405, France
Marie Christine Hugon
Affiliation:
[email protected], Université Paris Sud, Laboratoire de Physique des Gaz et des Plasmas, Orsay, N/A, 91405, France
Bernard Agius
Affiliation:
[email protected], Université Paris Sud, Laboratoire de Physique des Gaz et des Plasmas, Orsay, N/A, 91405, France
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Abstract

The effects on metal transport and loss in Hf and La aluminate films deposited on Si induced by rapid thermal annealing at 1000°C were investigated. Decomposition of HfAlO films on Si during rapid thermal annealing was reveled by the decrease of the Hf and Al contents. Metal loss from LaAlO/Si structures was also observed following annealing in vacuum, while strong metal transport and interfacial reaction were induced by annealing in a O2 containing atmosphere. These instabilities were hampered by means of post deposition thermal nitridation in NH3 at temperatures lower than 1000°C performed before the rapid thermal annealing step. The role of nitridation is discussed in terms of the N profiles in the nitrided structures.

Keywords

dielectricfilmion beam analysis
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E05-17
Copyright
Copyright © Materials Research Society 2006

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