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MBE Growth of Ferroelectric YMnO3 Thin Films on Si(111) Using Y2O3 Buffer Layers

Published online by Cambridge University Press:  10 February 2011

Shogo Imada ,
Shigeto Shouriki ,
Eisuke Tokumitsu  and
Hiroshi Ishiwara
Shogo Imada
Affiliation:
Frontier Collaborative Research Center, Midori-ku, Yokohama 226-8503, Japan
Shigeto Shouriki
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Eisuke Tokumitsu
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Hiroshi Ishiwara
Affiliation:
Frontier Collaborative Research Center, Midori-ku, Yokohama 226-8503, Japan Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Abstract

A ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In-situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best FWHM (full width at half maximum) values for Y2O3 and YMnO3 films are 0.40° and 0.8°, respectively. C-V characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.7V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 585
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Scott, J. F. and Araujo, C. A.: Science 246 1400 (1989).Google Scholar
[2] Ishiwara, H.: Jpn. J. Appl. Phys. 32 442 (1993).Google Scholar
[3] Park, B. E., Imada, S., Tokumitsu, E. and Ishiwara, H.: J. Korean Phys. Soc. 32 s1390 (1998).Google Scholar
[4] Park, B. E., Shouriki, S., Tokumitsu, E. and Ishiwara, H.: Jpn. J. Appl. Phys. 37 5145 (1993).Google Scholar
[5] Fukumoto, H., Imura, T. and Osaka, Y.: Appl. Phys. Lett. 55 360 (1989).Google Scholar
[6] Gurvitch, M., Mancanda, L. and Gibson, J. M.: Appl. Phys. Lett. 51 919 (1987).Google Scholar
[7] Yoshimura, T., Fujimura, N., Aoki, N., Hokayama, K., Tsukui, S., Kawabata, K. and Ito, T.: Jpn. J. Appl. Phys. 36 5921 (1997).Google Scholar
[8] Yoshimura, T., Fujimura, N., Aoki, N., Hokayama, K., Tsukui, S., Kawabata, K. and Ito, T.: J. Korean Phys. Soc. 32 s1632 (1998).Google Scholar
[9] Yakel, H.L. and Koehler, W.C., Bertaut, E. F. and Forrat, E. F.: Acta Cryst. 16 957 (1963).Google Scholar
[10] Fujimura, N., Ishida, T., Yoshimura, T. and Ito, T.: Appl. Phys. Lett. 69 1011 (1996).Google Scholar