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Laser-Induced Selective Copper Deposition on Polyimides and Semiconductors

Published online by Cambridge University Press:  22 February 2011

Seong-Don Hwang ,
S. S. Kher ,
J. T. Spencer  and
P. A. Dowben
Seong-Don Hwang
Affiliation:
Department of Physics, Syracuse University, Syracuse, New York, 13244–1130
S. S. Kher
Affiliation:
Department of Chemistry, Syracuse University, Syracuse, New York, 13244–4100
J. T. Spencer
Affiliation:
Department of Chemistry, Syracuse University, Syracuse, New York, 13244–4100
P. A. Dowben
Affiliation:
Department of Physics, Syracuse University, Syracuse, New York, 13244–1130
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Abstract

It has been demonstrated that copper can be selectively deposited on a variety of substrates including Teflon (polytetrafluroethylene or PTFE), Kapton (polyimide resin), silicon and gallium arsnide from solution by photo-assisted initiated deposition. A copper containing solution was prepared from a mixture of copper(I) chloride (Cu2Ci2) and decaborane (B10H14) in diethyl ether and/or THF (tetrahydrofuran). The copper films were fabricated by ultraviolet photolytic decomposition of copper chloride and polyhedral borane clusters. This liquid phase deposition has a gas-phase cluster analog that also results in copper deposition via pyrolysis. The approach of depositing metal thin films selectively by pholysis from solution is a novel and an underutilized approach to selective area deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 185
Copyright
Copyright © Materials Research Society 1993

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References

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