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A kinetic Monte Carlo Model of Silicon CVD Growth from a Mixed H2/siH4 Gas Source

Published online by Cambridge University Press:  10 February 2011

M. Fearn ,
M. Sayed ,
J. H. Jefferson  and
D. J. Robbins
M. Fearn
Affiliation:
Electronics Sector, DERA, St. Andrews Road, Great Malvern, Worcs, WR14 3PS, UK.
M. Sayed
Affiliation:
Electronics Sector, DERA, St. Andrews Road, Great Malvern, Worcs, WR14 3PS, UK.
J. H. Jefferson
Affiliation:
Electronics Sector, DERA, St. Andrews Road, Great Malvern, Worcs, WR14 3PS, UK.
D. J. Robbins
Affiliation:
Electronics Sector, DERA, St. Andrews Road, Great Malvern, Worcs, WR14 3PS, UK.
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Abstract

We report the development of an atomistic scale Kinetic Monte Carlo model of silicon CVD growth. By employing a variable time step algorithm, simulations have been performed over a range of time scales, enabling direct comparison with experimental data. The validity of using the kinetic theory of gases for evaluating steady state incoming particle fluxes within the model is demonstrated by comparison with computational fluid dynamics simulations. The model is applied to study hydrogen desorption rates from Si(001) and the dependence of silicon growth rate on substrate temperature, with results found to be in good agreement with experimental data. An experimentally observed decrease of growth rate with increasing H2 partial pressure is also reproduced by the model and shown to be caused by a decrease in silane adsorption on a hydrogen-rich surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 257
Copyright
Copyright © Materials Research Society 2000

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References

1.Battaile, C.C., Srolovitz, D.J. and Butler, J.E., J. Appl. Phys. 82, 6293 (1997).Google Scholar
2.Battaile, C.C., Srolovitz, D.J. and Butler, J.E., Diamond and Related Materials 6, 1198 (1997).Google Scholar
3.Gates, S.M., Greenlief, C.M. and Beach, D.B., J. Chem. Phys. 93, 7493 (1990).Google Scholar
4.Gates, S.M. and Kulkami, S.K., Appl. Phys. Lett. 58, 2963 (1991).Google Scholar
5.Wise, M.L., Koechler, B.G., Gupta, P., Coon, P.A. and George, S.M., Surface Science 258, 166 (1991).Google Scholar
6.Bowler, D.R., “A theroetical investigation of gas source growth of the Si(001) surface”, Ph. D. thesis, Oxford University, 1997.Google Scholar
7.Bratu, P., Brenig, W., Grob, A., Hartmann, M., Höfer, U., Kratzer, P. and Russ, R., Phys. Rev. B 54, 5978 (1996).Google Scholar
8.Garone, P.M., Sturm, J.C., Schwartz, P.V., Schwarz, S.A. and Wilkens, B.J., Appl. Phys. Lett. 56, 1275 (1990).Google Scholar
9.Sayed, M., N Fearn, I., Taylor, S. and Robbins, D.J. (in preparation).Google Scholar
10.Bortz, A.B., Kalos, M.H. and Ledowitz, J.L., J. Phys. Chem. 17, 10 (1975).Google Scholar
11.Höfer, U., Leping, Li and Heinz, T.F., Phys. Rev. B 45, 9485 (1992).Google Scholar
12.Robbins, D.J.., (unpublished data).Google Scholar