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Instabilities in the Mechanical Stress in Deposited SiO2 Films Caused by Thermal Treatments
Published online by Cambridge University Press: 25 February 2011
Abstract
Using an in-situ stress measurement technique that measures stress as a function of annealing temperature, instabilities in mechanical stress induced by heat treatment in a variety of doped/undoped SiO2 films deposited by APCVD, LPCVD and PECVD techniques have been investigated. A large hysteresis in mechanical stress, caused by first heat treatment to which the as-deposited films are subjected, has been observed in films deposited by APCVD/LPCVD techniques. No such hysteresis is obsesrved in films deposited by PECVD technique. Hysteresis in APCVD/LPCVD films is found to vanish once the films are heat treated at or above 800°C. The results are discussed in terms of oxide densification, the presence of hydrogenous species, and phosphorous.
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