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Identification and Characterization of Submicron Defects for Semiconductor Processing

Published online by Cambridge University Press:  01 February 2011

Wei Liu ,
Aime Fausz ,
John Svoboda ,
Brian Butcher ,
Rick Williams  and
Steve Schauer
Wei Liu
Affiliation:
Physical Analysis Laboratory of Advanced Products Research and Development Laboratory
Aime Fausz
Affiliation:
MOS12 Die Fab
John Svoboda
Affiliation:
MOS12 Die Fab
Brian Butcher
Affiliation:
MRAM, Technology Solutions Organization, Freescale Semiconductor, Inc. Chandler, AZ85224, U.S.A
Rick Williams
Affiliation:
MRAM, Technology Solutions Organization, Freescale Semiconductor, Inc. Chandler, AZ85224, U.S.A
Steve Schauer
Affiliation:
Physical Analysis Laboratory of Advanced Products Research and Development Laboratory
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Abstract

Auger Electron Spectroscopy (AES) is one of the few techniques that has surface sensitivity and small analysis volume to make it the ideal analytical technique for the compositional characterization of submicron defects. However, the integration of defect inspections at only a few processing steps during device fabrication results in the detection of many buried defects. In order to identify these defects, it is necessary to determine their composition. Combined with Focused Ion Beam (FIB) technique to expose the cross section of the buried defect, Auger analysis provides accurate identification of buried defects that are critical for quickly ramping to higher yields and recovering from yield excursions. This paper reports two examples of the use of AES combined with FIB to diagnose processing problems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.35
Copyright
Copyright © Materials Research Society 2005

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