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High aspect ratio etching of GaSb/AlGaAsSb for photonic crystals

Published online by Cambridge University Press:  01 February 2011

Tron Arne Nilsen ,
Anthony Martinez ,
Renato Bugge ,
Aaron Moscho ,
Luke F Lester  and
Bjørn-Ove Fimland
Tron Arne Nilsen
Affiliation:
[email protected], NTNU, Electronics and Telecommunications, Os. Bragstads plass 2A, Trondheim, N/A, NO-7034, Norway
Anthony Martinez
Affiliation:
[email protected], University of New Mexico, Center For High Technology Materials, United States
Renato Bugge
Affiliation:
[email protected], NTNU, Department of Electronics and Telecommunications, Norway
Aaron Moscho
Affiliation:
[email protected], University of New Mexico, Center For High Technology Materials, United States
Luke F Lester
Affiliation:
[email protected], University of New Mexico, Center For High Technology Materials, United States
Bjørn-Ove Fimland
Affiliation:
[email protected], NTNU, Department of Electronics and Telecommunications, Norway
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Abstract

Photonic crystal structures defined by interferometric lithography were etched into GaSb and AlGaAsSb with 90% Al content using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE) with BCl3 and BCl3/Ar gas mixture. Effects of DC bias, hole diameter, etch time and gas composition, on the etch rate of GaSb were investigated. Hardened photoresist (PR) was used as an etch mask for the experiments.

Keywords

reactive ion etchingsemiconductingoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE01-03
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Zhang, L., Lester, L. F., Shul, R. J., Willison, C. G., Leavitt, R. P., J. Vac. Sci. Technol. B 17(3), 965–969 (1999)Google Scholar
2. Giehl, A. R., Kessler, M., Grosse, A., Herhammer, N., Fouckhardt, H., J. Micromech. Microeng. 13, 238–245 (2003)Google Scholar
3. Hong, T., Zhang, Y. G., Liu, T.D., Zheng, Y. L., J. Electrochem. Soc. 152(5), 372–374 (2005)Google Scholar
4. Bewley, W.W., Felix, C.L., Vurgaftman, I., Bartolo, R.E., Lindle, J.R., Meyer, J.R., Lee, H., Martinelli, R.U., Solid State Electron, 46, 1557–1566 (2002)Google Scholar