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Hg1−x−yMnxCdyTe Alloys for 1.3−1.8 μm Photodiode Applications

Published online by Cambridge University Press:  26 February 2011

S. H. Shin ,
J. G. Pasko ,
D. S. Lo ,
W. E. Tennant ,
J. R. Anderson ,
M. Gorsk ,
M. Fotouhi  and
C. R. Lu
S. H. Shin
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
J. G. Pasko
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
D. S. Lo
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
W. E. Tennant
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
J. R. Anderson
Affiliation:
Department of Physics and Astronomy, University of Maryland, College Park, MD 20742
M. Gorsk
Affiliation:
Department of Physics and Astronomy, University of Maryland, College Park, MD 20742
M. Fotouhi
Affiliation:
Department of Physics and Astronomy, University of Maryland, College Park, MD 20742
C. R. Lu
Affiliation:
Department of Physics and Astronomy, University of Maryland, College Park, MD 20742
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Abstract

HgMnCdTe/CdTe photodiodes with responsivity cutoffs of up to 1.54 pm have been fabricated by liquid phase epitaxy (LPE). The mesa device structure consists of a boron-implanted mosaic fabricated on a p-type Hg1−x−yMnxCdyTe layer grown on a CdTe substrate. A reverse breakdown voltage (VB) of 50 V and a leakage current density of 1.5 × 10−4 A/cm2 at V = −10 V was measured at room temperature (295K). A 0.75 pF capacitance was also measured under a 5 V reverse bias at room temperature. This device performance based on the quaternary HgMnCdTe shows both theoretical and practical promise of superior performance for wavelengths in the range 1.3 to 1.8 μm for fiber optic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 267
Copyright
Copyright © Materials Research Society 1987

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