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Growth mechanism during selective epitaxy of p-doped SiC using VLS transport

Published online by Cambridge University Press:  13 June 2012

D. Carole ,
A. Vo-Ha ,
M. Lazar ,
N. Thierry-Jebali ,
D. Tournier ,
P. Brosselard ,
A. Thomas ,
V. Soulière  and
G. Ferro
D. Carole
Affiliation:
Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces, 43 Bd du 11 Novembre 1918, F-69622 Villeurbanne Cedex, France
A. Vo-Ha
Affiliation:
Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces, 43 Bd du 11 Novembre 1918, F-69622 Villeurbanne Cedex, France
M. Lazar
Affiliation:
Laboratoire Ampère, UMR-CNRS 5005, Bât. Léonard de Vinci, 21 avenue Jean Capelle, F-69621 Villeurbanne cedex
N. Thierry-Jebali
Affiliation:
Laboratoire Ampère, UMR-CNRS 5005, Bât. Léonard de Vinci, 21 avenue Jean Capelle, F-69621 Villeurbanne cedex
D. Tournier
Affiliation:
Laboratoire Ampère, UMR-CNRS 5005, Bât. Léonard de Vinci, 21 avenue Jean Capelle, F-69621 Villeurbanne cedex
P. Brosselard
Affiliation:
Laboratoire Ampère, UMR-CNRS 5005, Bât. Léonard de Vinci, 21 avenue Jean Capelle, F-69621 Villeurbanne cedex
A. Thomas
Affiliation:
Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces, 43 Bd du 11 Novembre 1918, F-69622 Villeurbanne Cedex, France
V. Soulière
Affiliation:
Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces, 43 Bd du 11 Novembre 1918, F-69622 Villeurbanne Cedex, France
G. Ferro
Affiliation:
Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces, 43 Bd du 11 Novembre 1918, F-69622 Villeurbanne Cedex, France
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Abstract

Since a few years, VLS transport is studied not only for homoepitaxial SiC growth but also for SiC selective epitaxial growth (SEG). In this approach, a stacking of silicon and aluminum layers is deposited on the substrate and patterns are created by photolithography. Upon melting, the Al-Si liquid droplets are fed by propane to obtain the SEG of p-doped SiC. In this work, the growth mechanisms were deeper investigated, in particular the influence of the carrier gas (H2 or Ar) and the growth temperature. SEG experiments showed higher growth rates than those measured in the standard configuration (nonselective growth). Moreover, the SiC layers exhibited step-bunched areas characteristic of liquid phase growth but also areas with morphological features due to a disruption of the step-bunching growth mode.

Keywords

crystal growthsemiconductingepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h04-07
Copyright
Copyright © Materials Research Society 2012

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References

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