Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-27T14:56:28.299Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and characterization of Titanium Niobium Oxide (TiNb2O7) thin films

Published online by Cambridge University Press:  10 July 2015

Venkateswarlu Daramalla  and
S.B. Krupanidhi
Venkateswarlu Daramalla
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore-560012, India.
S.B. Krupanidhi*
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore-560012, India.
*
*[email protected]
Get access

Abstract

Comprehensive studies were done on the growth and characterization of TiNb2O7 (TNO) complex oxide thin films by pulsed laser deposition for the first time. The TNO thin films were successfully grown on Pt(200)/TiO2/SiO2/Si(100) substrates. The structure, surface morphology and chemical properties of as-grown thin films were studied as function of deposition temperature, pressure and laser fluence. The GIXRD and HRTEM analyses revealed that the as-grown TNO films were in the monoclinic crystal structure and independent of laser fluence. The HAADF STEM elemental mapping confirms the uniform composition of Ti, Nb and O in TNO thin films. The atomic force microscopy and field emission scanning microscopy shows that, the surface morphology and microstructure of TNO films varied significantly with respect to experimental conditions. The X-ray photoelectron spectroscopy quantitative results indicated that the binding energies of Ti and Nb elements shifted towards right with increasing oxygen partial pressure. The effects of oxygen partial pressure and laser fluence on as-grown TNO films were studied.

Keywords

oxidephysical vapor deposition (PVD)polycrystal
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2128679
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Ha, S. D. and Ramanathan, S., J. Appl. Phys. 110 (7), 071101 (2011).10.1063/1.3640806CrossRefGoogle Scholar
Reddy, M. V., Subba Rao, G. V. and Chowdari, B. V. R., Chem. Rev. 113 (7), 5364–5457 (2013).10.1021/cr3001884CrossRefGoogle Scholar
Cava, R. J., Krajewski, J. J., Peck, W. F. and Roberts, G. L., J. Mater. Res. 11 (06), 1428–1432 (1996).10.1557/JMR.1996.0179CrossRefGoogle Scholar
Han, J.-T., Huang, Y.-H. and Goodenough, J. B., Chem. Mater. 23 (8), 2027–2029 (2011)10.1021/cm200441hCrossRefGoogle Scholar
Fei, L., Xu, Y., Wu, X., Li, Y., Xie, P., Deng, S., Smirnov, S. and Luo, H., Nanoscale 5 (22), 11102–11107 (2013).10.1039/c3nr03594hCrossRefGoogle Scholar
Tang, K., Mu, X., van Aken, P. A., Yu, Y. and Maier, J., Adv. Energy Mater. 3 (1), 49–53 (2013).10.1002/aenm.201200396CrossRefGoogle Scholar
Eason, R., Pulsed Laser Deposition of Thin Films, (Wiley, Hoboken, New Jersey, 2007), p.9.Google Scholar