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Examination of the Silicon – Silicon Carbide Interface by Ultraviolet Photoemission Spectroscopy

Published online by Cambridge University Press:  10 February 2011

C. Koitzscht ,
M. O'Brient ,
D. Johri ,
A. Stoltzt  and
R. Nemanicht
C. Koitzscht
Affiliation:
North Carolina State University, Department of Physics
M. O'Brient
Affiliation:
North Carolina State University, Department of Physics
D. Johri
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering
A. Stoltzt
Affiliation:
North Carolina State University, Department of Physics
R. Nemanicht
Affiliation:
North Carolina State University, Department of Physics
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Abstract

Photoemission spectroscopy (UPS) was used to investigate the interface properties of deposited silicon on hexagonal 6H-silicon carbide. SiC cleaned in Si flux from a molecular beam epitaxy (MBE) system was used for this study. All processes were accomplished in an ultra high vacuum integrated system that allowed all cleaning, deposition, and analysis to be completed without exposure to ambient atmosphere. Thicknesses of sub- to multiple monolayers were deposited and the valence band structure was investigated. The valence band maximum (VBM) was observed to shift for Si depositions greater than 1 monolayer. The VBM offset was determined to be 2.4eV for a layer of 60Å Si on SiC. Furthermore, the prominent surface state feature of the silicon carbide (0001)si surface is reduced after Si deposition. The results are discussed in terms of the electronic properties of the Si – SiC interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 357
Copyright
Copyright © Materials Research Society 1998

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References

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