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Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates

Published online by Cambridge University Press:  15 February 2011

L.J. Schowalter ,
Y. Shusterman ,
R. Wang ,
I. Bhat ,
G. Arunmozhi  and
G.A. Slack
L.J. Schowalter
Affiliation:
Physics, Appl. Physics, & Astronomy Dept., Rensselaer Polytechnic Inst., Troy, NY 12180, [email protected]
Y. Shusterman
Affiliation:
Physics, Appl. Physics, & Astronomy Dept., Rensselaer Polytechnic Inst., Troy, NY 12180, [email protected]
R. Wang
Affiliation:
Physics, Appl. Physics, & Astronomy Dept., Rensselaer Polytechnic Inst., Troy, NY 12180, [email protected]
I. Bhat
Affiliation:
Physics, Appl. Physics, & Astronomy Dept., Rensselaer Polytechnic Inst., Troy, NY 12180, [email protected]
G. Arunmozhi
Affiliation:
Physics, Appl. Physics, & Astronomy Dept., Rensselaer Polytechnic Inst., Troy, NY 12180, [email protected]
G.A. Slack
Affiliation:
Physics, Appl. Physics, & Astronomy Dept., Rensselaer Polytechnic Inst., Troy, NY 12180, [email protected]
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Abstract

High quality, epitaxial growth of AlN and AlxGal-xN by OMVPE has been demonstrated on single-crystal AIN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [1010] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.76
Copyright
Copyright © Materials Research Society 1999

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References

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