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Electrical Conduction Mechanism of Highly Transparent and Conductive ZnO Thin Films

Published online by Cambridge University Press:  21 March 2011

Tadatsugu Minami ,
Shingo Suzuki  and
Toshihiro Miyata
Tadatsugu Minami
Affiliation:
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, JAPAN
Shingo Suzuki
Affiliation:
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, JAPAN
Toshihiro Miyata
Affiliation:
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, JAPAN
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Abstract

In this paper, we describe the underlying theory along with experiments concerning the electrical conductivity of transparent conducting ZnO films with a carrier concentration of 1019-1021 cm−3. The experimentally determined mobility as a function of carrier concentration in the range of 1019-1021 cm−3 could be quantitatively referenced to a theoretically calculated mobility that is dominated by not only grain boundary scattering but also ionized impurity scattering using the Brooks-Herring-Dingle theory with both degeneracy and nonparabolicity of the conduction band taken into account. Concerning nonparabolicity, the conduction band effective mass as a function of carrier concentration was theoretically analyzed and experimentally determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F1.3
Copyright
Copyright © Materials Research Society 2001

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References

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