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The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers

Published online by Cambridge University Press:  28 February 2011

B. Park ,
F. Spaepen ,
J. M. Poate  and
D. C. Jacobson
B. Park
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
F. Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Artificial amorphous Si/Ge multilayers of equiatomic average composition with a repeat length around 60 Å have been prepared by ion beam sputtering. Implantation with 29Si led to a decrease in the intensity of the X-ray diffraction peaks arising from the composition modulation, which could be used for an accurate measurement of the implantation-induced mixing distance. Subsequent annealing showed no difference between the interdiffusivity in an implanted and unimplanted sample.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 493
Copyright
Copyright © Materials Research Society 1987

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References

1. Polk, D.E., J. Non-Cryst. Solids 5, 365 (1971). A good review can be found in R. Zallen, “The Physics of Amorphous Solids”, John Wiley & Sons, NY (1983).Google Scholar
2. Poate, J.M., Jacobson, D.C., Williams, J.S., Elliman, R.G. and Boerma, D.O., Nuol. Inst. & Meth., to be published; D.C. Jacobson, J.M. Poate, R.G. Elliman and J.S. Williams, this volume.Google Scholar
3. For an overview see Greer, A.L. and Spaepen, F., in “Synthetic Modulated Structures”, edited by Chang, L.L. and Giessen, B.C., Academic, NY (1985), p. 419.Google Scholar
4. Prokes, S.M. and Spaepen, F., Appl. Phys. Lett. 47, 234 (1985); Mat. Res. Soc. Symp. Proc. 56, 383 (1986).Google Scholar
5. Janot, C., Roth, M., Mardhal, G., Piecuch, M. and Bruson, A., J. Non-Cryst. Solids 81, 41 (1986).Google Scholar
6. Janot, C., Bruson, A. and Marchal, G., J. Physique 47, 1751 (1986).Google Scholar
7. Spaepen, F., Greer, A.L., Kelton, K.F. and Bell, J.L., Rev. Sci. Instr. 56, 1340 (1985).Google Scholar
8. Guinier, A., “X-Ray Diffraction”, Freeman, San Francisco CA (1963), p.279.Google Scholar
9. Ziegler, J.F., Biersack, J.P. and Littmark, U., ”The Stopping and Range of Ions in Solids”, Pergamon Press, New York (1985).Google Scholar
10. de Fontaine, D., Ph.D. Thesis, Northwestern University (1967).Google Scholar
11. Mayer, J.W. and Lau, S.S., in “Surface Modification and Alloying”, edited by Poate, J. M, Foti, G. and Jacobson, D.C., Plenum Press (1983), Chapter 9.Google Scholar
12. Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M., and Jacobson, D.C., J. Appl. Phys. 57, 1795 (1985).Google Scholar