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The Effect of Rapid Thermal Treatment on the Structural and Optoelectronic Properties of Epitaxial Gaas on Si Grown With or Without Ge Intermediate Layers

Published online by Cambridge University Press:  28 February 2011

El-Hang Lee ,
M.Abdul Awal ,
E. Y. Chan ,
R. L. Opila ,
D. C. Jacobson  and
S. J. Pearton
El-Hang Lee
Affiliation:
AT&T, Engineering Research CenterP. O. Box 900 Princeton,NJ 08540
M.Abdul Awal
Affiliation:
AT&T, Engineering Research CenterP. O. Box 900 Princeton,NJ 08540
E. Y. Chan
Affiliation:
AT&T, Engineering Research CenterP. O. Box 900 Princeton,NJ 08540
R. L. Opila
Affiliation:
AT&T, Bell Laboratories600 Mountain Avenue Murray Hill,NJ 07974
D. C. Jacobson
Affiliation:
AT&T, Bell Laboratories600 Mountain Avenue Murray Hill,NJ 07974
S. J. Pearton
Affiliation:
AT&T, Bell Laboratories600 Mountain Avenue Murray Hill,NJ 07974
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Abstract

Characteristics of MOCVD GaAs grown on Si are compared before and after a rapid thermal treatment. The GaAs-on-Si samples were prepared both with and without a Ge intermediate layer, which is used to accomodate mismatches of lattice, thermal and chemical origin between GaAs and Si. Structural, interfacial, chemical, and electrical changes have been examined. RBS and Raman characterization showed improvement of GaAs crystallinity after RTA. In most cases, the interfaces were found to become sharper after RTA, but chemical interdiffusion was observed to cause some effect on the structural and electrical properties. For gold-contacted GaAs, RTA seems to degrade the electrical and optoelectronic properties via gold interdiffusion into GaAs. Comparative studies of the GaAs/Si and GaAs/Ge/Si samples suggests that the two respond somewhat differently to RTA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 347
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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