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The Effect of Atmospheric Water Vapour on the Temperature Dependence of Capacitance in BaxSr1−xTiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

D. O'Neill  and
J. M. Gregg
D. O'Neill
Affiliation:
Condensed Matter Physics & Material Science Research Division, Queen's University of Belfast, Belfast, BT7 INN, N., Ireland
J. M. Gregg
Affiliation:
Condensed Matter Physics & Material Science Research Division, Queen's University of Belfast, Belfast, BT7 INN, N., Ireland
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Abstract

Thin film ceramic Au/BaxSr(1−x)TiO3/YBCO/MgO planar capacitors with x ranging from 1 to 0.4 were fabricated using pulsed laser deposition (PLD). Structural and chemical characterisation showed the ferroelectric layers to be of perovskite crystallography, with cation stoichiometry close to that of the target. Auger depth profiling showed the interface between ferroelectric and lower electrode to be reasonably chemically sharp.

Capacitance versus temperature measurements performed in air showed a pronounced difference in behaviour between bulk and thin film devices. Bulk samples exhibited the expected capacitance anomaly at the Curie temperature. In contrast, thin film capacitors showed a prominent peak in capacitance at temperatures between 7 and 25°C on heating, irrespective of composition and did not show any evidence of expected Curie anomalies.

Further characterisation under vacuum and with deliberate additions of water vapour to the vacuum chamber indicated that the peaks observed in thin film devices described above could be attributed to the presence of atmospheric water vapour. This demonstrates that water vapour in the air can have a significant effect on the dielectric response of thin film capacitors around room temperature.

Studies on higher quality films showed a reduced response to water vapour.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 35
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Feuersanger, A. E., In Thin Film Dielectrics, ed. Vratny, F. p. 209 Electrochemical, New York (1969).Google Scholar
[2] Horikawa, T., Mikami, N., Makita, T., Tanimura, J., Kataoka, M., Sato, K. and Nunoshita, M., Jpn. J. Appl. Phys., 32, p. 4126 (1993).Google Scholar
[3] Frey, M. H. and Payne, D. A., Appl. Phys. Lett., 63, p. 2753 (1993).Google Scholar
[4] Hayashi, T., Oji, N. and Maiwa, H., Jpn. J. Appl. Phys, 33, p. 5277 (1994).Google Scholar
[5] Abe, K., Komatsu, S., Yanase, N., Sano, K. and Kawakubo, T., Integrated Ferroelectrics, 17, p. 89, (1997).Google Scholar
[6] Kämmer, K., Holzapfel, B., Hiilz, H., Hdssler, W. and Schultz, L., Ferroelectrics, 201, p. 65, (1997).Google Scholar
[7] Iijima, K., Terashima, T., Yamamoto, K., Hirata, K. and Bando, Y., Appl. Phys. Lett., 56, p. 527, (1990).Google Scholar
[8] Desu, S. B., Phys. Stat. Sol., 141, p. 119, (1994).Google Scholar
[9] Bowman, R. M., O'Neill, D., McCurry, M., Gregg, J. M., Appl. Phys. Lett. 70, p. 2622, (1997).Google Scholar
[10] Hou, S. Y., Kwo, J., Watts, R. K., Cheng, J. Y., Fork, D. K., Appl. Phys. Lett. 67, p. 1387, (1995).Google Scholar
[11] Diamant, H., Drenck, K., Pepinsky, R., The Review of Scientific Instruments, 28, p. 30, (1957).Google Scholar
[12] Bornstein, Landolt, “Numerical data and Functional Relationships in science and technology”, edited by Hellwege, K. H. (Springer-Verlag Berlin, Heidelberg, New York) 16a, p. 416, (1981).Google Scholar