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Dependence of Ferroelectric Properties of SBT Based Capacitors on the Electrode Material

Published online by Cambridge University Press:  10 February 2011

S. Tirumala ,
S. O. Ryu ,
K. B. Lee ,
R. Vedula  and
S. B. Desu
S. Tirumala
Affiliation:
Department of Materials Science and Engineering, 213 Holden Hall, Virginia Tech, Blacksburg, VA 24061-0237
S. O. Ryu
Affiliation:
Department of Materials Science and Engineering, 213 Holden Hall, Virginia Tech, Blacksburg, VA 24061-0237
K. B. Lee
Affiliation:
Department of Materials Science and Engineering, 213 Holden Hall, Virginia Tech, Blacksburg, VA 24061-0237
R. Vedula
Affiliation:
Department of Materials Science and Engineering, 213 Holden Hall, Virginia Tech, Blacksburg, VA 24061-0237
S. B. Desu
Affiliation:
Department of Materials Science and Engineering, 213 Holden Hall, Virginia Tech, Blacksburg, VA 24061-0237
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Abstract

The effect of various electrode materials on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films has been investigated for non-volatile memory applications. Two sets of electrode structures, viz., Pt-Ir based and Pt-Rh based, were sputter deposited in-situ on Si substrates. SBT thin films were deposited on these electrodes using a metal-organic solution deposition technique followed by a post-deposition anneal at 750 °C in oxygen. Structural characterization revealed a polycrystalline nature with predominant perovskite phase in SBT thin films. Ferroelectric properties were studied in capacitor mode by depositing top electrodes, where the top electrode material is identical to that of the bottom electrode. Extensive analysis of the ferroelectric properties signify the important role played by the electrode material in establishing the device applicability is reported in this work.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 185
Copyright
Copyright © Materials Research Society 1999

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References

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