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Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO3 Gate Dielectrics on Si(100)

Published online by Cambridge University Press:  01 February 2011

Gerd Norga ,
Chiara Marchiori ,
Christophe Rossel ,
Alexandre Guiller ,
Jean-Pierre Locquet ,
Heinz Siegwart ,
Daniele Caimi ,
Jean Fompeyrine ,
J. W. Seo  and
Christel Dieker
Gerd Norga
Affiliation:
[email protected], Politecnico di Milano, Department of Physics, Via Anzani 42, Como, N/A, I 22100, Italy
Chiara Marchiori
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Christophe Rossel
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Alexandre Guiller
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Jean-Pierre Locquet
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Heinz Siegwart
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Daniele Caimi
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Jean Fompeyrine
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
J. W. Seo
Affiliation:
[email protected], Ecole Polytechnique Federale de Lausanne, Ecublens, N/A, CH1015, Switzerland
Christel Dieker
Affiliation:
[email protected], Ecole Polytechnique Federale de Lausanne, Ecublens, N/A, CH1015, Switzerland
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Abstract

In this paper, we point out the critical role of oxygen stoichiometry in the solid state epitaxy process used for obtaining 5 A EOT in SrTiO3 gate dielectrics on Si. Incomplete oxygenation of the TiO2 fraction of the amorphous SrO.TiO2 film enhances the inherent tendency of TiO2 to react with Si to yield TiSi2 and SiO2. O2 excess is needed to obtain a crystalline interface after UHV crystallization. The solid state epitaxy process results in heavily oxygen deficient films, whose insulating properties can be recovered by an atomic oxygen treatment.

Keywords

epitaxyoxideSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E02-06
Copyright
Copyright © Materials Research Society 2006

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